Abstract: Aspects of the invention include methods, systems, and computer program products for integrated circuit development using cross-hierarchy antenna condition verification. A method includes obtaining a design of a hierarchical macro distributed between multiple files for an integrated circuit and analyzing, by a design verification tool, a route between at least one child macro and at least one pin of the hierarchical macro as defined in the files. The method further includes determining, by the design verification tool, a plurality of connection characteristics of the at least one child macro and the at least one pin forming the route and calculating, by the design verification tool, an antenna condition for the route based on the connection characteristics. The design of the hierarchical macro is adjusted to remove a violation of an antenna rule based on determining that the antenna condition of the route violates the antenna rule.

Abstract: Aspects of the invention include methods, systems, and computer program products for integrated circuit development using cross-hierarchy antenna condition verification. A method includes obtaining a design of a hierarchical macro distributed between multiple files for an integrated circuit and analyzing, by a design verification tool, a route between at least one child macro and at least one pin of the hierarchical macro as defined in the files. The method further includes determining, by the design verification tool, a plurality of connection characteristics of the at least one child macro and the at least one pin forming the route and calculating, by the design verification tool, an antenna condition for the route based on the connection characteristics. The design of the hierarchical macro is adjusted to remove a violation of an antenna rule based on determining that the antenna condition of the route violates the antenna rule.

Abstract: Methods, systems and computer program products for avoiding Boolean DRC failures during cell placement are provided. Aspects include generating a semiconductor layout by filling a plurality of rows within a macro block with cells including functional cells and fill cells. Aspects also include modifying the semiconductor layout by removing one or more fill cells from the macro block to create a gap. Aspects also include examining a set of cells that border edges of the gap to identify one or more predicted rule violations. Based on the identified one or more predicted rule violations, aspects also include modifying the semiconductor layout to change a shape of the gap to avoid the one or more predicted rule violations.

Abstract: Methods, systems and computer program products for avoiding Boolean DRC failures during cell placement are provided. Aspects include generating a semiconductor layout by filling a plurality of rows within a macro block with cells including functional cells and fill cells. Aspects also include modifying the semiconductor layout by removing one or more fill cells from the macro block to create a gap. Aspects also include examining a set of cells that border edges of the gap to identify one or more predicted rule violations. Based on the identified one or more predicted rule violations, aspects also include modifying the semiconductor layout to change a shape of the gap to avoid the one or more predicted rule violations.

Abstract: Methods, systems and computer program products for providing fin-based fill cell optimization are provided. Aspects include receiving a semiconductor layout comprising at least a first logic cell, a second logic cell, and a fill cell. A left boundary of the fill cell is adjacent to the first logic cell and a right boundary of the fill cell is adjacent to the second logic cell. Aspects also include determining a number of active left fins, right fins, and active fill cell fins associated with FinFET structures of the first logic cell, second logic cell and fill cell, respectively. Aspects also include comparing the number of active fins to a set of fin rules. Responsive to determining that the semiconductor layout violates the set of fin rules, aspects include modifying the semiconductor layout to change the number of active fill cell fins to satisfy the set of fin rules.