Patents by Inventor Robert Mark Englekirk

Robert Mark Englekirk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10389306
    Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: August 20, 2019
    Assignee: pSemi Corporation
    Inventors: Poojan Wagh, Kashish Pal, Robert Mark Englekirk, Tero Tapio Ranta, Keith Bargroff, Simon Edward Willard
  • Publication number: 20190173433
    Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.
    Type: Application
    Filed: January 21, 2019
    Publication date: June 6, 2019
    Inventors: Tero Tapio Ranta, Keith Bargroff, Christopher C. Murphy, Robert Mark Englekirk
  • Patent number: 10305433
    Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: May 28, 2019
    Assignee: pSemi Corporation
    Inventors: Tero Tapio Ranta, Keith Bargroff, Christopher C. Murphy, Robert Mark Englekirk
  • Publication number: 20190158031
    Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 23, 2019
    Inventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
  • Publication number: 20190158029
    Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 23, 2019
    Inventors: Poojan Wagh, Kashish Pal, Robert Mark Englekirk, Tero Tapio Ranta, Keith Bargroff, Simon Edward Willard
  • Patent number: 10276371
    Abstract: Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for making such modifications. The modified regions eliminate or manage accumulated charge that would otherwise arise because of the interaction of the underlying trap rich layer and active layer devices undergoing transient changes of state, thereby eliminating or mitigating the effects of such accumulated charge on non-RF integrated circuitry fabricated on such substrates. Embodiments retain the beneficial characteristics of SOI substrates with a trap rich layer for RF circuitry requiring high linearity, such as RF switches, while avoiding the problems of a trap rich layer for circuitry that is sensitive to accumulated charge effects caused by the presence of the trap rich layer, such as non-RF analog circuitry and amplifiers (including power amplifiers and low noise amplifiers).
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: April 30, 2019
    Assignee: pSemi Corporation
    Inventors: Robert Mark Englekirk, Keith Bargroff, Christopher C. Murphy, Tero Tapio Ranta, Simon Edward Willard
  • Publication number: 20190121383
    Abstract: A controllable temperature coefficient bias (CTCB) circuit is disclosed. The CTCB circuit can provide a bias to an amplifier. The CTCB circuit includes a variable with temperature (VWT) circuit having a reference circuit and a control circuit. The control circuit has a control output, a first current control element and a second current control element. Each current control element has a “controllable” resistance. One of the two current control elements may have a relatively high temperature coefficient and another a relatively low temperature coefficient. A controllable resistance of one of the current control elements increases when the controllable resistance of the other current control element decreases. However, the “total resistance” of the current control circuit remains constant with a constant temperature. The VWT circuit has an output with a temperature coefficient that is determined by the relative amount of current that flows through each current control element of the control circuit.
    Type: Application
    Filed: October 25, 2017
    Publication date: April 25, 2019
    Inventors: Robert Mark Englekirk, Keith Bargroff, Christopher C. Murphy, Tero Tapio Ranta
  • Patent number: 10250199
    Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: April 2, 2019
    Assignee: pSemi Corporation
    Inventors: Jonathan Klaren, Poojan Wagh, David Kovac, Eric S. Shapiro, Neil Calanca, Dan William Nobbe, Christopher Murphy, Robert Mark Englekirk, Emre Ayranci, Keith Bargroff, Tero Tapio Ranta
  • Patent number: 10250131
    Abstract: A bias generation method or apparatus defined by any one or any practical combination of numerous features that contribute to low noise and/or high efficiency biasing, including: having a charge pump control clock output with a waveform having limited harmonic content or distortion compared to a sine wave; having a ring oscillator to generating a charge pump clock that includes inverters current limited by cascode devices and achieves substantially rail-to-rail output amplitude; having a differential ring oscillator with optional startup and/or phase locking features to produce two phase outputs suitably matched and in adequate phase opposition; having a ring oscillator of less than five stages generating a charge pump clock; capacitively coupling the clock output(s) to some or all of the charge transfer capacitor switches; biasing an FET, which is capacitively coupled to a drive signal, to a bias voltage via an “active bias resistor” circuit that conducts between output terminals only during portions of a wa
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: April 2, 2019
    Assignee: pSemi Corporation
    Inventors: Tae Youn Kim, Robert Mark Englekirk, Dylan J. Kelly
  • Publication number: 20190057868
    Abstract: Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for making such modifications. The modified regions eliminate or manage accumulated charge that would otherwise arise because of the interaction of the underlying trap rich layer and active layer devices undergoing transient changes of state, thereby eliminating or mitigating the effects of such accumulated charge on non-RF integrated circuitry fabricated on such substrates. Embodiments retain the beneficial characteristics of SOI substrates with a trap rich layer for RF circuitry requiring high linearity, such as RF switches, while avoiding the problems of a trap rich layer for circuitry that is sensitive to accumulated charge effects caused by the presence of the trap rich layer, such as non-RF analog circuitry and amplifiers (including power amplifiers and low noise amplifiers).
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Inventors: Robert Mark Englekirk, Keith Bargroff, Christopher C. Murphy, Tero Tapio Ranta, Simon Edward Willard
  • Publication number: 20190058485
    Abstract: A non-linear converter comprising a non-linear voltage divider having a plurality of resistors representing a non-linear transfer function, an analog multiplexer having analog multiplexer inputs coupled to the non-linear voltage divider and configured to output an analog multiplexer output, the analog multiplexer chooses one of the plurality of resistors based on a logic signal and the non-linear transfer function, an analog comparator having an analog comparator first input configured to receive an analog input voltage, an analog comparator second input configured to receive the analog multiplexer output and the analog comparator configured to output a comparator voltage output and a logic loop coupled to the analog comparator and configured to receive the comparator voltage output and configured to output the logic signal, wherein the logic signal represents a linearized digital word.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Inventor: Robert Mark Englekirk
  • Publication number: 20190025863
    Abstract: Embodiments of signal bias generators and regulators are described generally herein. Other embodiments may be described and claimed.
    Type: Application
    Filed: September 26, 2018
    Publication date: January 24, 2019
    Inventors: Tae Youn Kim, Robert Mark Englekirk
  • Publication number: 20190007042
    Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.
    Type: Application
    Filed: July 2, 2018
    Publication date: January 3, 2019
    Inventors: Tero Tapio Ranta, Shawn Bawell, Robert W. Greene, Christopher N. Brindle, Robert Mark Englekirk
  • Publication number: 20180337043
    Abstract: Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for making such modifications. The modified regions eliminate or manage accumulated charge that would otherwise arise because of the interaction of the underlying trap rich layer and active layer devices undergoing transient changes of state, thereby eliminating or mitigating the effects of such accumulated charge on non-RF integrated circuitry fabricated on such substrates. Embodiments retain the beneficial characteristics of SOI substrates with a trap rich layer for RF circuitry requiring high linearity, such as RF switches, while avoiding the problems of a trap rich layer for circuitry that is sensitive to accumulated charge effects caused by the presence of the trap rich layer, such as non-RF analog circuitry and amplifiers (including power amplifiers and low noise amplifiers).
    Type: Application
    Filed: May 19, 2017
    Publication date: November 22, 2018
    Inventors: Robert Mark Englekirk, Keith Bargroff, Christopher C. Murphy, Tero Tapio Ranta, Simon Edward Willard
  • Publication number: 20180337146
    Abstract: Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same VDS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same VGS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both VGS and VDS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.
    Type: Application
    Filed: May 19, 2017
    Publication date: November 22, 2018
    Inventors: Robert Mark Englekirk, Keith Bargroff, Christopher C. Murphy, Tero Tapio Ranta, Simon Edward Willard
  • Patent number: 10128864
    Abstract: A non-linear converter comprising a non-linear voltage divider having a plurality of resistors representing a non-linear transfer function, an analog multiplexer having analog multiplexer inputs coupled to the non-linear voltage divider and configured to output an analog multiplexer output, the analog multiplexer chooses one of the plurality of resistors based on a logic signal and the non-linear transfer function, an analog comparator having an analog comparator first input configured to receive an analog input voltage, an analog comparator second input configured to receive the analog multiplexer output and the analog comparator configured to output a comparator voltage output and a logic loop coupled to the analog comparator and configured to receive the comparator voltage output and configured to output the logic signal, wherein the logic signal represents a linearized digital word.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: November 13, 2018
    Assignee: pSemi Corporation
    Inventor: Robert Mark Englekirk
  • Publication number: 20180316327
    Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.
    Type: Application
    Filed: July 2, 2018
    Publication date: November 1, 2018
    Inventors: Tero Tapio Ranta, Keith Bargroff, Christopher C. Murphy, Robert Mark Englekirk
  • Patent number: 10114391
    Abstract: Embodiments of signal bias generators and regulators are described generally herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: October 30, 2018
    Assignee: pSemi Corporation
    Inventors: Tae Youn Kim, Robert Mark Englekirk
  • Publication number: 20180262166
    Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. Other embodiments include bias compensation circuits that directly regulate a bias signal to an amplifier stage as a function of localized heating of one or more of amplifier stages. Such bias compensation circuits include physical placement of at least one bias compensation circuit element in closer proximity to at least one amplifier stage than other bias compensation circuit elements. One bias compensation circuit embodiment includes a temperature-sensitive current mirror circuit for regulating the bias signal.
    Type: Application
    Filed: February 28, 2018
    Publication date: September 13, 2018
    Inventors: Tsuyoshi Takagi, Tero Tapio Ranta, Keith Bargroff, Christopher C. Murphy, Robert Mark Englekirk
  • Publication number: 20180262164
    Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.
    Type: Application
    Filed: February 28, 2018
    Publication date: September 13, 2018
    Inventors: Tero Tapio Ranta, Keith Bargroff, Christopher C. Murphy, Robert Mark Englekirk