Patents by Inventor Robert Masci

Robert Masci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200233125
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: February 9, 2020
    Publication date: July 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20200166681
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Patent number: 10598832
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: March 24, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20190212480
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: January 9, 2018
    Publication date: July 11, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci