Abstract: A method and circuit for measuring internal pulses includes an enable circuit configured to receive a control signal from an on-chip built-in tester to enable measurement of internal circuits. A delay chain is configured to receive a pulse signal from an on-chip circuit component. Sampling latches each include a data input coupled between adjacent delay elements of the delay chain and synchronized with the clock signal such that a transition in the pulse signal is indicated by comparing adjacent digital values in an output sequence.

Abstract: A method and circuit for measuring internal pulses includes an enable circuit configured to receive a control signal from an on-chip built-in tester to enable measurement of internal circuits. A delay chain is configured to receive a pulse signal from an on-chip circuit component. Sampling latches each include a data input coupled between adjacent delay elements of the delay chain and synchronized with the clock signal such that a transition in the pulse signal is indicated by comparing adjacent digital values in an output sequence.

Abstract: A local on-chip programmable pulsewidth and delay generating circuit includes a clock generation circuit configured to receive a global clock signal and output a local clock signal. The clock generation circuit includes a pulse shaping portion which adjusts a pulse width of the global clock signal in accordance with at least one of a trailing edge delay and a leading edge delay. The leading edge delay is generated by a leading edge delay circuit, and the trailing edge delay is generated by a trailing edge delay circuit configured to apply a delay to a trailing edge of a pulse. The trailing edge delay circuit includes a delay chain having programmable stages of delay elements, each stage being independently controlled using control bits decoded from address latches.

Abstract: A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.

Abstract: A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.

Abstract: An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun.

Abstract: An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun.

Abstract: A local on-chip programmable pulsewidth and delay generating circuit includes a clock generation circuit configured to receive a global clock signal and output a local clock signal. The clock generation circuit includes a pulse shaping portion which adjusts a pulse width of the global clock signal in accordance with at least one of a trailing edge delay and a leading edge delay. The leading edge delay is generated by a leading edge delay circuit, and the trailing edge delay is generated by a trailing edge delay circuit configured to apply a delay to a trailing edge of a pulse. The trailing edge delay circuit includes a delay chain having programmable stages of delay elements, each stage being independently controlled using control bits decoded from address latches.

Abstract: A method and circuit for measuring internal pulses includes an enable circuit configured to receive a control signal from an on-chip built-in tester to enable measurement of internal circuits. A delay chain is configured to receive a pulse signal from an on-chip circuit component. Sampling latches each include a data input coupled between adjacent delay elements of the delay chain and synchronized with the clock signal such that a transition in the pulse signal is indicated by comparing adjacent digital values in an output sequence.

Abstract: A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.

Abstract: A local on-chip programmable pulsewidth and delay generating circuit includes a clock generation circuit configured to receive a global clock signal and output a local clock signal. The clock generation circuit includes a pulse shaping portion which adjusts a pulse width of the global clock signal in accordance with at least one of a trailing edge delay and a leading edge delay. The leading edge delay is generated by a leading edge delay circuit, and the trailing edge delay is generated by a trailing edge delay circuit configured to apply a delay to a trailing edge of a pulse. The trailing edge delay circuit includes a delay chain having programmable stages of delay elements, each stage being independently controlled using control bits decoded from address latches.

Abstract: An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun.

Abstract: A method and circuit for measuring internal pulses includes an enable circuit configured to receive a control signal from an on-chip built-in tester to enable measurement of internal circuits. A delay chain is configured to receive a pulse signal from an on-chip circuit component. Sampling latches each include a data input coupled between adjacent delay elements of the delay chain and synchronized with the clock signal such that a transition in the pulse signal is indicated by comparing adjacent digital values in an output sequence.

Abstract: A local on-chip programmable pulsewidth and delay generating circuit includes a clock generation circuit configured to receive a global clock signal and output a local clock signal. The clock generation circuit includes a pulse shaping portion which adjusts a pulse width of the global clock signal in accordance with at least one of a trailing edge delay and a leading edge delay. The leading edge delay is generated by a leading edge delay circuit, and the trailing edge delay is generated by a trailing edge delay circuit configured to apply a delay to a trailing edge of a pulse. The trailing edge delay circuit includes a delay chain having programmable stages of delay elements, each stage being independently controlled using control bits decoded from address latches.

Abstract: A domino read bit line structure (20) integral to an SRAM array (1, 2) with thirty-two word lines or less to access SRAM cells divided into two groups (3, 4, 90, 100) is described. The bit line structure (20) includes a dynamic bit decode multiplexer (11, 40) and two NAND circuits (5, 80) used to combine the two groups (3, 4, 90, 100), wherein in order to reduce power consumption the two NANDS (80) drive the dynamic bit decode multiplexer (40) directly, such that true and complement dynamic outputs (rt, rc) drive a set-reset latch (50) to convert the dynamic outputs (rt, rc) to a single static signal (doc), wherein the output of the set-reset latch (50) is already static so that the set-reset latch (50) acts as an effective array output latch (7).

Abstract: A circuit for synchronizing a multiplied system clock signal includes a device for generating a system clock signal, a first device that receives the system clock signal and generates a synchronization signal and at least one second device that receives the system clock signal and the synchronization signal. Each of the second devices includes a device for multiplying the system clock signal to produce the multiplied system clock signal and a device for synchronizing the multiplied system clock signal with each other multiplied system clock signal produced by the other second devices based on the synchronization signal.

Abstract: A method and means for selectively stopping the internal clock of a microprocessor on any of 16 phases using functional components which include: a clock multiplier circuit, that receives a clock signal input from an external oscillator or other appropriate source, and outputs the internal clock signal for the microprocessor; control logic circuitry for processing and inputting stop signals to the clock multiplier; and a clock special purpose register, which provides control signals to the control logic circuitry to determine when stopping of the internal clock signal should occur.