Patents by Inventor Robert McCormick Robertson
Robert McCormick Robertson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6902682Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.Type: GrantFiled: November 18, 2002Date of Patent: June 7, 2005Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, James T. Gardner
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Patent number: 6610374Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.Type: GrantFiled: September 10, 2001Date of Patent: August 26, 2003Assignee: Applied Materials, Inc.Inventors: Chuang-Chuang Tsai, Takako Takehara, Regina Qiu, Yvonne LeGrice, William Reid Harshbarger, Robert McCormick Robertson
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Publication number: 20030070616Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.Type: ApplicationFiled: November 18, 2002Publication date: April 17, 2003Applicant: Applied Materials, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, James T. Gardner
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Patent number: 6500265Abstract: An apparatus for holding a substrate on a support layer in a processing chamber. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. A device is provided for moving each lift pin relative to the support layer. A device is also provided for producing a plasma within the processing chamber.Type: GrantFiled: November 15, 2000Date of Patent: December 31, 2002Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, James T. Gardner
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Patent number: 6468601Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.Type: GrantFiled: March 10, 2000Date of Patent: October 22, 2002Assignee: Applied Komatsu Technology, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Dan Maydan
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Publication number: 20020018862Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.Type: ApplicationFiled: September 10, 2001Publication date: February 14, 2002Applicant: Applied Kamatsu Technology, Inc.Inventors: Chuang-Chuang Tsai, Takako Takehara, Regina Qiu, Yvonne LeGrice, William Reid Harshbarger, Robert McCormick Robertson
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Patent number: 6294219Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.Type: GrantFiled: March 3, 1998Date of Patent: September 25, 2001Assignee: Applied Komatsu Technology, Inc.Inventors: Chuang-Chuang Tsai, Takako Takehara, Regina Qiu, Yvonne LeGrice, William Reid Harshbarger, Robert McCormick Robertson
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Patent number: 6177023Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.Type: GrantFiled: July 11, 1997Date of Patent: January 23, 2001Assignee: Applied Komatsu Technology, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, James T. Gardner
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Patent number: 6172322Abstract: A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.Type: GrantFiled: November 7, 1997Date of Patent: January 9, 2001Assignee: Applied Technology, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Takako Takehara, Taekyung Won, Sheng Sun
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Patent number: 6055927Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.Type: GrantFiled: January 14, 1997Date of Patent: May 2, 2000Assignee: Applied Komatsu Technology, Inc.Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Dan Maydan