Abstract: Various implementations for providing compensation based at least in part on a number of entity groups are described. A relationship network associated with an entity includes a plurality of network entities. The relationship network is determined, and a number of entity groups within the relationship network are counted. The entity groups have a predetermined number of network entities. An entity is caused to be provided with compensation that is based at least in part on the number of entity groups in the relationship network.

Abstract: Various implementations for providing compensation based at least in part on a number of entity groups are described. A relationship network associated with an entity includes a plurality of network entities. The relationship network is determined, and a number of entity groups within the relationship network are counted. The entity groups have a predetermined number of network entities. An entity is caused to be provided with compensation that is based at least in part on the number of entity groups in the relationship network.

Abstract: Various implementations for providing compensation based at least in part on a number of entity groups are described. A relationship network associated with an entity includes a plurality of network entities. The relationship network is determined, and a number of entity groups within the relationship network are counted. The entity groups have a predetermined number of network entities. An entity is caused to be provided with compensation that is based at least in part on the number of entity groups in the relationship network.

Abstract: A detection system and method having at least one detection unit, and a control centre unit. The detection unit includes at least one sensor configured to generate sensor data correlated to sensed conditions, a locator for actively determining location data corresponding to the location of the detection unit, and a communicator configured to communicate the sensor data and location data. The control centre includes a receiver for receiving the sensor data and the location data, together with a control processor which is configured to determine a threat level correlated to the sensor data.

Abstract: Improvements in a PECVD chamber to provide better uniformity in film thickness and mechanical strength are described. Less contact surface is provided to the outer edge of the wafer and non-uniform gas distribution occurs through adjustments to the gas distribution plate to provide this uniformity.

Abstract: A detection system and method having at least one detection unit, and a control centre unit. The detection unit includes at least one sensor configured to generate sensor data correlated to sensed conditions, a locator for actively determining location data corresponding to the location of the detection unit, and a communicator configured to communicate the sensor data and location data. The control centre includes a receiver for receiving the sensor data and the location data, together with a control processor which is configured to determine a threat level correlated to the sensor data.

Abstract: A combined saw blade and measuring device, or ruler. The saw blade includes a measuring device, or ruler, manufactured as an integrated component of the blade. In this case the ruler is marked, or etched, on the saw blade such that the blade acts as a ruler and straight edge. The ruler is marked on the horizontal edge opposite the saw teeth and runs the length of the saw blade. In this manner there is no need for adjunct attachments to the blade that act as measuring device or the use of a separate measuring device, or ruler, for the purpose of measuring the length of material to be cut. This design eliminates the need for a separate measuring device and therefore simplifies the process of measuring and cutting lengths of material.

Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.

Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.

Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.

Abstract: An energy absorbing device includes an energy absorber element having a plurality of elongated hollow hexagonal cells. The cells are arranged in a block shape with first and second layers interconnected by an intermediate plate. The intermediate plate closes adjacent ends of the first and second layers and forms three-sided pyramidal structures which project into each individual cell of the first and second layers. Each pyramidal structure has an apex located near the center of each cell. The energy absorber element is deformable under impact loading conditions to absorb and dissipate energy. Upon the removal of the impact load the energy absorber element returns to its original shape.