Abstract: The invention provides a system and method for using a database to rebuild a damaged or destroyed building. In particular, user contact information is received and stored in a database that represents a party owning the damaged or destroyed building. Further, pre-damaged discovery information is stored that represents features of the damaged or destroyed building and features of a building site of the damaged or destroyed building. Replacement building information is also received and stored that represents features for a replacement building that correspond with the damaged or destroyed building. In addition, foundation upgrade information is collected that represents a desired modification to be made to the building site.

Abstract: The invention includes a system and method for using a database to sell a custom home project to a buyer. Electronic construction information related to specifications and costs associated with a plurality of projects is stored in the database. Further, electronic construction information related to specifications and costs associated with custom features of the projects is stored. Buyer rules are defined to be applied in selling one of the projects. The buyer rules include obtaining buyer financial information that represents the financial ability of the buyer, obtaining personal information that represents whether the buyer is personally able to purchase the one project, retrieving from the database first electronic construction information related to the one project, retrieving from the database second electronic construction information related to at least one custom feature to be included in the project, and determining whether the buyer is able to afford the one project financially.

Abstract: The present invention preferably enables parties to electronically submit parameters into an Internet application regarding a custom homebuilding project. The application accurately predicts labor and materials costs associated therefor. The present invention also provides details directed to the processes associated with custom homebuilding projects and eliminates surprises that may arise during a building process.

Abstract: The specification describes silicon MOS devices with gate dielectrics having the composition Ta1−xAlxOy, where x is 0.03-0.7 and y is 1.5-3, Ta1−xSixOy, where x is 0.05-0.15, and y is 1.5-3, and Ta1−x−zAlxSizOy, where 0.7>x+z>0.05, z<0.15 and y is 1.5-3. By comparison with the standard SiO2 gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO2 interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

Abstract: Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

Abstract: An electro-optic device comprising an electro-optic crystal substrate, an optical waveguide path in the crystal adjacent the substrate surface and an electrode spaced from the surface by a buffer layer is provided with enhanced operating stability by forming the buffer layer of a transparent electronically conductive material. Preferred buffer materials are electronically conductive gallium-indium-oxide and electronically conductive zinc-indium-tin-oxide.

Abstract: The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7>x+z>0.05, z<0.15 and y is 1.5-3. By comparison with the standard SiO.sub.2 gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO.sub.2 interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

Abstract: A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.

Abstract: A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.