Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Abstract: The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.

Abstract: Exemplary methods of electroplating may include delivering a current from a power supply through a plating bath of an electroplating chamber for a first period of time. The current delivered may be or include a pulsed current at a duty cycle of less than or about 50%. The methods may include plating a first amount of metal on a substrate within the plating bath. The substrate may define a via within the substrate. The methods may include, subsequent the first period of time, transitioning the power supply to a continuous DC current delivery for a second period of time. The methods may include plating a second amount of metal on the substrate.

Abstract: In electroplating apparatus, a paddle or agitator agitates electrolyte in a vessel to provide high velocity fluid flow at the surface of a wafer. The agitator is designed and/or moved to also selectively shield part of the wafer, for example the edge of the wafer, from the electric field in the vessel. Selectively shielding may be achieved by temporally shifting the average position of the agitator towards one side of the wafer, by omitting or shortening slots in the agitator, and/or by synchronizing movement of the agitator with rotation of the wafer.

Abstract: The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.

Abstract: In electroplating apparatus, a paddle or agitator agitates electrolyte in a vessel to provide high velocity fluid flow at the surface of a wafer. The agitator is designed and/or moved to also selectively shield part of the wafer, for example the edge of the wafer, from the electric field in the vessel. Selectively shielding may be achieved by temporally shifting the average position of the agitator towards one side of the wafer, by omitting or shortening slots in the agitator, and/or by synchronizing movement of the agitator with rotation of the wafer.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: Compositions suitable for electroplating copper including one or more sources of copper, one or more alkanolamines or polymeric amines; and water are provided. These compositions are useful in the deposition and repair of seed layers used in the manufacture of electronic devices. Methods using these compositions are also provided.

Abstract: Disclosed are compositions useful for repair and electroplating of seed layers. Also disclosed are methods of repairing and electroplating such seed layers.