Patents by Inventor Robert Mosier

Robert Mosier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7383696
    Abstract: A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: June 10, 2008
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Yasuo Ohama
  • Publication number: 20070051296
    Abstract: A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 8, 2007
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Yasuo Ohama
  • Publication number: 20040040497
    Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.
    Type: Application
    Filed: September 3, 2003
    Publication date: March 4, 2004
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Paul Spencer
  • Patent number: 6641663
    Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.
    Type: Grant
    Filed: December 12, 2001
    Date of Patent: November 4, 2003
    Assignee: Heracus Shin-Estu America
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Paul Spencer
  • Publication number: 20030106491
    Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.
    Type: Application
    Filed: December 12, 2001
    Publication date: June 12, 2003
    Applicant: Heraeus Shin-Etsu America
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Paul Spencer
  • Patent number: 6510707
    Abstract: Silica crucibles containing an inner layer which is substantially pure and substantially bubble-free and methods for making such crucibles. The inner layer is also substantially stable against roughening and spot devitrification. The inner layer is formed by making a web structure which is then converted to a continuous layer, thereby minimizing or eliminating bubble formation. The inner layer is also formed using a gettering agent which getters alkaline and alkaline-earth elements while the inner layer is formed. The alkaline and alkaline-earth elements are gettered on an innermost portion of the inner layer which is later removed, leaving an inner layer with relatively few impurities. When used in a CZ-crystal growing process, the inner surface of the crucible remains smooth and substantially no bubbles grow in the inner layer.
    Type: Grant
    Filed: March 15, 2001
    Date of Patent: January 28, 2003
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Takayuki Togawa, Robert Mosier, Paul Spencer
  • Publication number: 20030012899
    Abstract: A crucible adapted for use in formation of a silicon crystal comprises a crucible wall including a bottom wall and a side wall. An inner layer is formed on an inner portion of the crucible wall and has distributed therein a crystallization agent containing an element selected from the group consisting of barium, aluminum, titanium and strontium.
    Type: Application
    Filed: June 18, 2002
    Publication date: January 16, 2003
    Applicant: Heraeus Shin-Etsu America
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Paul Spencer
  • Publication number: 20020166340
    Abstract: Silica crucibles containing an inner layer which is substantially pure and substantially bubble-free and methods for making such crucibles. The inner layer is also substantially stable against roughening and spot devitrification. The inner layer is formed by making a web structure which is then converted to a continuous layer, thereby minimizing or eliminating bubble formation. The inner layer is also formed using a gettering agent which getters alkaline and alkaline-earth elements while the inner layer is formed. The alkaline and alkaline-earth elements are gettered on an innermost portion of the inner layer which is later removed, leaving an inner layer with relatively few impurities. When used in a CZ-crystal growing process, the inner surface of the crucible remains smooth and substantially no bubbles grow in the inner layer.
    Type: Application
    Filed: March 15, 2001
    Publication date: November 14, 2002
    Inventors: Katsuhiko Kemmochi, Takayuki Togawa, Robert Mosier, Paul Spencer