Abstract: A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material includes alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material includes an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material comprises alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material comprises an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger, wherein.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A technique for forming a thermally conductive interface with patterned metal foil is disclosed. In one particular exemplary embodiment, the technique may be realized as a thermally conductive metal foil having at least one patterned surface for facilitating heat dissipation from at least one integrated circuit device to at least one heat sink. The metal foil preferably has a characteristic formability and softness that may be exemplified by alloys of lead, indium, tin, and other malleable metals, and/or composites comprising layers of at least one malleable metal alloy.