Patents by Inventor Robert N. Lang
Robert N. Lang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7314700Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.Type: GrantFiled: December 5, 2002Date of Patent: January 1, 2008Assignee: International Business Machines CorporationInventors: Wu-Song Huang, Wenjie Li, Wayne Moreau, David R. Medeiros, Karen E. Petrillo, Robert N. Lang, Marie Angelopoulos
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Patent number: 6979518Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: GrantFiled: December 4, 2003Date of Patent: December 27, 2005Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Patent number: 6821718Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.Type: GrantFiled: September 9, 2003Date of Patent: November 23, 2004Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Publication number: 20040170907Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: ApplicationFiled: December 4, 2003Publication date: September 2, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Patent number: 6730445Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: GrantFiled: November 22, 2002Date of Patent: May 4, 2004Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Publication number: 20040048204Abstract: A negative resist composition, comprising:Type: ApplicationFiled: September 9, 2003Publication date: March 11, 2004Applicant: International Business MachinesInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Patent number: 6682860Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: GrantFiled: April 12, 2002Date of Patent: January 27, 2004Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Patent number: 6653045Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.Type: GrantFiled: February 16, 2001Date of Patent: November 25, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Publication number: 20030194569Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: ApplicationFiled: November 22, 2002Publication date: October 16, 2003Inventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Publication number: 20030194568Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.Type: ApplicationFiled: April 12, 2002Publication date: October 16, 2003Applicant: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina Babich, S. Jay Chey, Michael Straight Hibbs, Robert N. Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette
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Patent number: 6586156Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.Type: GrantFiled: July 17, 2001Date of Patent: July 1, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Wu-Song Huang, Dai Junyan, Ranee W. Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo
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Publication number: 20030049561Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.Type: ApplicationFiled: July 17, 2001Publication date: March 13, 2003Applicant: International Business Machines CorporationInventors: Marie Angelopoulos, Wu-Song Huang, Dai Junyan, Ranee W. Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo
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Publication number: 20020115017Abstract: A negative resist composition, comprising:Type: ApplicationFiled: February 16, 2001Publication date: August 22, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Patent number: 6420084Abstract: The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.Type: GrantFiled: June 23, 2000Date of Patent: July 16, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau
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Patent number: 5399462Abstract: A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.Type: GrantFiled: July 13, 1994Date of Patent: March 21, 1995Assignee: International Business Machines CorporationInventors: Krishna G. Sachdev, Premlatha Jagannathan, Robert N. Lang, Harbans S. Sachdev, Ratnam Sooriyakumaran, Joel R. Whitaker
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Patent number: 5240812Abstract: A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.Type: GrantFiled: November 18, 1991Date of Patent: August 31, 1993Assignee: International Business Machines CorporationInventors: Willard E. Conley, Ranee W. Kwong, Richard J. Kvitek, Robert N. Lang, Christopher F. Lyons, Steve S. Miura, Wayne M. Moreau, Harbans S. Sachdev, Robert L. Wood
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Patent number: 5115090Abstract: Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.Type: GrantFiled: March 30, 1990Date of Patent: May 19, 1992Inventors: Krishna G. Sachdev, John P. Hummel, Ranee W. Kwong, Robert N. Lang, Leo L. Linehan, Harbans S. Sachdev