Abstract: The input AGC and reference (REF) voltages are converted to currents and provided as differential inputs to a current amplifier. The current amplifier scales these currents proportional to absolute temperature. The translinear principle is used to realize the current amplifier and ensures linearity of the differential output currents. These currents are then converted to voltages by resistor elements. The result is applied to a simple differential pair that produces two AGC control currents that follow the hyperbolic tangent function. The two AGC control currents are equal when the AGC input is three-fourths the reference value. The overall gain response is well modeled by a second order function and is self-limiting at high gain values.

Abstract: A TTL-level-output interface circuit includes a biCMOS inverter coupled between a voltage supply terminal and a ground terminal; a first npn transistor coupled between the voltage supply terminal and a TTL interface terminal and a second npn transistor connected in series with the first npn transistor between the TTL interface terminal and the ground terminal; an n.phi. network coupled between the TTL output terminal and the base of the second npn transistor by an n-channel MOSFET, which has its gate connected to the inverter input terminal. When a high input signal is applied to the inverter input terminal, the n-channel MOSFET couples the n.phi. network to the base of the second npn transistor, in order both to limit the base current of the second npn transistor in order to prevent saturation of the second npn transistor, and to enable current to be conducted to the base of the second npn transistor 56 through the n.phi.

Abstract: A pair of bipolar transistors are connected in totem-pole fashion to provide an emitter-collector output connection. A pair of complementary MOS field-effect transistors are connected in push-pull fashion for each receiving a common input signal on a gate thereof and for driving a base of a corresponding one of the bipolar transistors. Resistors are connected to the field-effect transistors for isolating the output connection and substantially eliminating crowbar current.

Abstract: Disclosed is a RAM that includes a semiconductor substrate having P-type dopant impurity atoms and having a major surface. A plurality of spaced apart regions of N-type atoms lie within a predetermined area on the surface to define storage regions for the cells of the memory. An insulating layer of substantially uniform thickness with a conductive layer lying thereon completely covers the predetermined area except for a plurality of elongated openings which extend outward from each of the storage regions. A layer of P-type dopant atoms lie at substantially the same level as the storage regions throughout that portion of the substrate that is beneath the insulating layer. By this structure, the perimeter of a transfer gate that exhibits essentially no narrow channel width effect is defined from each storage region by the respective openings.