Patents by Inventor Robert O. Frenette

Robert O. Frenette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual work function CMOS device
    Patent number: 6028339
    Abstract: A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: February 22, 2000
    Assignee: International Business Machines Corporation
    Inventors: Robert O. Frenette, Dale P. Hallock, Stephen A. Mongeon, Anthony C. Speranza, William R. P. Tonti
  • Method for producing dual work function CMOS device
    Patent number: 5770490
    Abstract: A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.
    Type: Grant
    Filed: August 29, 1996
    Date of Patent: June 23, 1998
    Assignee: International Business Machines Corporation
    Inventors: Robert O. Frenette, Dale P. Hallock, Stephen A. Mongeon, Anthony C. Speranza, William R. P. Tonti