Patents by Inventor Robert O'Handley

Robert O'Handley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070282378
    Abstract: Apparatus and method for harvesting energy from the environment and/or other external sources and converting it to useful electrical energy. The harvester does not contain a permanent magnet or other local field source but instead relies on the earth's magnetic field of another source of a magnetic field that is external to the sensing device. One advantage of these new harvesters is that they can be made smaller and lighter than energy harvesters that contain a magnet and/or an inertial mass. A small implantable stimulator(s) includes at least one passive magnetostrictive/electro-active (PME) magnetic-field sensor for delivering electrical stimulation to surrounding tissue. The PME is charged utilizing a changing magnetic field from an external alternating magnetic field source at a frequency particular to the PME. The small stimulator provides means of stimulating a nerve, tissue or internal organ with direct electrical current, such as relatively low-level direct current for temporary or as needed therapy.
    Type: Application
    Filed: April 11, 2007
    Publication date: December 6, 2007
    Applicant: FERRO SOLUTIONS, INC.
    Inventors: Jiankang Huang, Hariharan Sundram, Robert O'Handley, David Bono
  • Patent number: 6403999
    Abstract: Method and system for estimating a concentration of free electrons with a selected spin polarization in a semiconductor material. A static magnetic field and an electromagnetic field are impressed on the semiconductor, and free electrons are injected (through diffusion or tunneling) into the semiconductor material from a ferromagnetic material. Motion of the injected, spin-polarized electrons, within the semiconductor gives rise to a Hall voltage across the semiconductor. This voltage is measured at one or more spaced apart locations and analyzed to detect presence of, and estimate a concentration of, free electrons with a selected spin at at least one location within the semiconductor. Effects of an imposed stress, temperature, illumination or electromagnetic field on the semiconductor can be determined.
    Type: Grant
    Filed: May 23, 2001
    Date of Patent: June 11, 2002
    Assignee: Spinix Corporation
    Inventors: Robert O'Handley, Yi-Wun Li
  • Patent number: 5565849
    Abstract: A self-biasing magnetostrictive element for a magnetomechanical EAS marker is formed by first annealing a ribbon of ferromagnetic material in the presence of a magnetic field applied in a transverse direction relative to the ribbon's longitudinal axis, and then annealing the ribbon a second time in the presence of a magnetic field applied in the direction of the longitudinal axis. The twice-annealed ribbon exhibits remanent magnetization along the longitudinal axis and has plural magnetic domains situated along the longitudinal axis. The orientation of magnetization in each domain is canted by .+-..theta..degree.<90.degree. from the ribbon axis with the direction of canting alternating from domain to domain.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: October 15, 1996
    Assignee: Sensormatic Electronics Corporation
    Inventors: Wing Ho, Nen-chin Liu, Robert O'Handley