Patents by Inventor Robert Olah

Robert Olah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070139116
    Abstract: Fully differential amplifier circuits are described herein that set the common mode voltage as well as reduce the output offset voltage (offset cancellation). A circuit according to one embodiment includes a first section for generating first and second output signals on first and second outputs from first and second input signals, a first negative feedback loop coupled to the first section, and a second negative feedback loop coupled to the first section. A second section controls the first negative feedback loop for adjusting the first output signal towards a common mode voltage level, and for reducing an offset voltage of the first output signal in different loop bandwidths. A third section controls the second negative feedback loop for adjusting the second output signal towards the common mode voltage level, and for reducing an offset voltage of the second output signal in different loop bandwidths.
    Type: Application
    Filed: December 15, 2005
    Publication date: June 21, 2007
    Inventors: Ta-wei Yang, Jyn-Bang Shyu, Robert Olah
  • Publication number: 20070141983
    Abstract: A circuit for recovering data from an incoming data stream according to one embodiment includes a capacitor and a substantially constant current source for charging the capacitor. A subcircuit generates a signal causing the capacitor to discharge upon detecting a first type of transition in the incoming data stream, the capacitor re-charging upon being at least partially discharged. A comparator compares a voltage on a node coupled to the capacitor to a reference voltage, the comparator outputting a first signal if the voltage on the node is higher than the reference voltage and outputting a second signal if the voltage on the node is lower than the reference voltage, the first signal being associated with a first logic value, the second signal being associated with a second logic value.
    Type: Application
    Filed: December 15, 2005
    Publication date: June 21, 2007
    Inventors: Jyn-Bang Shyu, Robert Olah, Rohit Mittal
  • Publication number: 20070139159
    Abstract: A circuit according to one embodiment of the present invention includes a first frequency to voltage converter for storing a reference voltage based on a frequency of an incoming signal, and a second frequency to voltage converter for storing a second voltage based on the frequency of the incoming signal, the second voltage being a fraction of the reference voltage. A voltage to frequency converter creates a voltage on a node, the voltage repeatedly varying between about the reference voltage and about the second voltage. From this varying signal, a clock signal can be derived.
    Type: Application
    Filed: December 15, 2005
    Publication date: June 21, 2007
    Inventors: Rohit Mittal, Robert Olah, Jyn-Bang Shyu
  • Publication number: 20070066126
    Abstract: High speed flex printed circuit boards (FLEX-PCBs) are disclosed comprising a dielectrics systems with the back-side trenches, adhesives, signal lines and ground-plans, wherein the signal line and ground-plan are located on the dielectrics. Using of the open trenches in the substrate help to reduce the microwave loss and dielectric constant and thus increasing the signal carrying speed of the interconnects. Thus, according to the present invention, it is possible to provide a simply constructed high speed FLEX-PCB using the conventional material and conventional FLEX-PCB manufacturing which facilitates the design of circuits with controlled bandwidth based on the trench opening in the dielectrics, and affords excellent connection reliability. As the effective dielectric constant is reduced, the signal width is required to make wider or the dielectric thickness is required to make thinner keeping fixed characteristics impedance.
    Type: Application
    Filed: September 20, 2005
    Publication date: March 22, 2007
    Applicant: BANPIL PHOTONICS, INC.
    Inventors: Achyut Dutta, Robert Olah
  • Publication number: 20060028305
    Abstract: High speed printed circuit boards (PCBs) are disclosed comprising a dielectrics systems with the back-side trenches, prepregs, signal lines and ground-plans, wherein the signal line and ground-plan are located on the dielectrics. Using of the open trenches in the substrate help to reduce the microwave loss and dielectric constant and thus increasing the signal carrying speed of the interconnects. Thus, according to the present invention, it is possible to provide a simple high speed PCB using the conventional material and conventional PCB manufacturing which facilitates the design of circuits with controlled bandwidth based on the trench opening in the dielectrics, and affords excellent reliability. According to this present invention, high speed PCB with the interconnect system contains whole portion or portion of interconnects for high speed chips interconnects and that have have the dielectric system with opened trench or slot to reduce the microwave loss.
    Type: Application
    Filed: July 30, 2005
    Publication date: February 9, 2006
    Applicant: BANPIL PHOTONICS, INC.
    Inventors: Achyut Dutta, Robert Olah
  • Patent number: 6680626
    Abstract: A differential receiver having a pair of cross-coupled signal conditioning devices improves transition time and data signal integrity. In an embodiment, the differential receiver includes two signal input nodes and a plurality of transistors, and two signal output nodes. The pair of cross-coupled signal conditioning devices are coupled to the transistors and function to reduce voltage swing between the two output nodes, thereby keeping the transistors in a saturation region.
    Type: Grant
    Filed: June 5, 2002
    Date of Patent: January 20, 2004
    Assignee: Lightspeed Semiconductor Corporation
    Inventors: Chit-Ah Mak, Bingda B. Wang, Eric West, Robert A. Olah
  • Publication number: 20030227299
    Abstract: A differential receiver having a pair of cross-coupled signal conditioning devices improves transition time and data signal integrity. In an embodiment, the differential receiver includes two signal input nodes and a plurality of transistors, and two signal output nodes. The pair of cross-coupled signal conditioning devices are coupled to the transistors and function to reduce voltage swing between the two output nodes, thereby keeping the transistors in a saturation region.
    Type: Application
    Filed: June 5, 2002
    Publication date: December 11, 2003
    Inventors: Chit-Ah Mak, Bingda B. Wang, Eric West, Robert A. Olah
  • Patent number: 6288526
    Abstract: A voltage regulator circuit in an integrated circuit (IC) device such as a Complex Programmable Logic Device (CPLD) comprises a reference voltage generator, a tuning circuit, and an output driver circuit. The reference voltage generator converts an external supply voltage provided to the IC device into a stable reference voltage. The tuning circuit converts the stable reference voltage into a desired internal supply voltage, such as the reduced voltage required by deep sub-micron transistors. The output driver circuit provides the desired internal supply voltage with sufficient current to properly power the circuits of the IC device. The tuning circuit includes an op-amp and resistive elements configured in a voltage divider configuration in the negative feedback loop of the op-amp. The output of the op-amp can be set to the desired internal supply voltage by properly sizing the resistive elements.
    Type: Grant
    Filed: May 30, 2000
    Date of Patent: September 11, 2001
    Assignee: Xilinx, Inc.
    Inventor: Robert A. Olah
  • Patent number: 6285584
    Abstract: A plurality of flash electrically erasable programmable read only memory (EEPROM) cells is disclosed wherein metal lines couple both the sources and the drains of the flash cells. Reading of these flash cells is accomplished by applying a positive voltage to the source and reading from the associated metal source line. A soft erase scheme for increasing the threshold voltage of over-programmed flash cells is provided that prevents the leakage caused by applying a positive voltage to the drain.
    Type: Grant
    Filed: January 23, 2001
    Date of Patent: September 4, 2001
    Assignee: Xilinx, Inc.
    Inventors: Michael G. Ahrens, Anders T. Dejenfelt, Qi Lin, Robert A. Olah
  • Patent number: 6212103
    Abstract: A plurality of flash electrically erasable programmable read only memory (EEPROM) cells is disclosed wherein metal lines couple both the sources and the drains of the flash cells. Reading of these flash cells is accomplished by applying a positive voltage to the source and reading from the associated metal source line. A soft erase scheme for increasing the threshold voltage of over-programmed flash cells is provided that prevents the leakage caused by applying a positive voltage to the drain.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: April 3, 2001
    Assignee: Xilinx, Inc.
    Inventors: Michael G. Ahrens, Anders T. Dejenfelt, Qi Lin, Robert A. Olah
  • Patent number: 6172519
    Abstract: A method of operating a pin of an in-system programmable logic device (ISPLD) which includes the steps of (1) applying a predetermined voltage to the pin when the ISPLD is in a set-up mode, and (2) maintaining the last voltage applied to the pin when the ISPLD is in a normal operating mode. The ISPLD is in the set-up mode when the logic of the ISPLD has not yet been configured, or is being configured. The ISPLD is in the normal operating mode after the logic of the ISPLD has been configured. A particular ISPLD includes a pin and a logic gate having a first input terminal coupled to the pin, a second input terminal coupled to receive a control signal, and an output terminal coupled to the pin. When the ISPLD is in the set-up mode, the control signal causes the logic gate to apply a predetermined voltage to the pin. When the ISPLD is in the normal operating mode, the control signal causes the logic gate to maintain the last applied voltage on the pin.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: January 9, 2001
    Assignee: Xilinx, Inc.
    Inventors: David Chiang, Jesse H. Jenkins, IV, Robert A. Olah
  • Patent number: 6114843
    Abstract: A voltage regulator circuit in an integrated circuit (IC) device such as a Complex Programmable Logic Device (CPLD) includes a reference voltage generator, a tuning circuit, and an output driver circuit. The reference voltage generator converts an external supply voltage provided to the IC device into a stable reference voltage. The tuning circuit converts the stable reference voltage into a desired internal supply voltage, such as the reduced voltage required by deep sub-micron transistors. The output driver circuit provides the desired internal supply voltage with sufficient current to properly power the circuits of the IC device. The tuning circuit includes an op-amp and resistive elements configured in a voltage divider configuration in the negative feedback loop of the op-amp. The output of the op-amp can be set to the desired internal supply voltage by properly sizing the resistive elements.
    Type: Grant
    Filed: August 18, 1998
    Date of Patent: September 5, 2000
    Assignee: Xilinx, Inc.
    Inventor: Robert A. Olah
  • Patent number: 5862082
    Abstract: A flash electrically erasable programmable read only memory (EEPROM) cell fabricated in a semiconductor substrate. A first well region having a first conductivity type is located in the semiconductor substrate. A second well region having a second conductivity type, opposite the first conductivity type, is located in the first well region. A non-volatile memory transistor and an independently controllable access transistor are fabricated in the second well region. The non-volatile memory transistor and the access transistor are connected in series, such that the source of the access transistor is coupled to the drain of the non-volatile memory transistor.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: January 19, 1999
    Assignee: Xilinx, Inc.
    Inventors: Anders T. Dejenfelt, Diane M. Hoffstetter, Qi Lin, Robert A. Olah, Sholeh Diba