Patents by Inventor Robert Otis Miller

Robert Otis Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a landing pad structure in an integrated circuit
    Patent number: 6025265
    Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.
    Type: Grant
    Filed: December 12, 1997
    Date of Patent: February 15, 2000
    Assignee: STMicroelectronics, Inc.
    Inventors: Robert Otis Miller, Gregory Clifford Smith
  • Method of forming a landing pad structure in an integrated circuit
    Patent number: 5828130
    Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.
    Type: Grant
    Filed: December 3, 1996
    Date of Patent: October 27, 1998
    Assignee: STMicroelectronics, Inc.
    Inventors: Robert Otis Miller, Gregory Clifford Smith
  • Method of forming a landing pad sturcture in an integrated circuit
    Patent number: 5719071
    Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.
    Type: Grant
    Filed: December 22, 1995
    Date of Patent: February 17, 1998
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Robert Otis Miller, Gregory Clifford Smith