Patents by Inventor Robert Parkash Mandal

Robert Parkash Mandal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mesoporous films having reduced dielectric constants
    Patent number: 6818289
    Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
    Type: Grant
    Filed: October 2, 2002
    Date of Patent: November 16, 2004
    Assignee: Air Products and Chemicals, Inc.
    Inventors: James Edward MacDougall, Kevin Ray Heier, Scott Jeffrey Weigel, Timothy W. Weidman, Alexandros T. Demos, Nikolaos Bekiaris, Yunfeng Lu, Michael P Nault, Robert Parkash Mandal
  • Mesoporous films having reduced dielectric constants
    Publication number: 20030157311
    Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
    Type: Application
    Filed: October 2, 2002
    Publication date: August 21, 2003
    Inventors: James Edward MacDougall, Kevin Ray Heier, Scott Jeffrey Weigel, Timothy W. Weidman, Alexandros T. Demos, Nikolaos Bekiaris, Yunfeng Lu, Michael P. Nault, Robert Parkash Mandal
  • Mesoporous films having reduced dielectric constants
    Patent number: 6592980
    Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: July 15, 2003
    Assignee: Air Products and Chemicals, Inc.
    Inventors: James Edward MacDougall, Kevin Ray Heier, Scott Jeffrey Weigel, Timothy W. Weidman, Alexandros T. Demos, Nikolaos Bekiaris, Yunfeng Lu, Michael P. Nault, Robert Parkash Mandal