Abstract: A method for classifying memory cells in an integrated circuit is provided, wherein the integrated circuit has a memory cell field including a plurality of memory cells. The method includes determining, for each subset of the memory cells of a plurality of subsets of the memory cells, a threshold voltage distribution; determining whether the determined threshold voltage distributions fulfill a threshold voltage criterion; and depending on whether the determined threshold voltage distributions fulfill the threshold voltage criterion, classifying at least some of the non-selected memory cells.

Abstract: Embodiments of the invention relate to a method for accessing a memory cell in an integrated circuit, a method of determining a set of word line voltage identifiers in an integrated circuit, a method for classifying memory cells in an integrated circuit, a method for determining a word line voltage for accessing a memory cell in an integrated circuit and integrated circuits. In an embodiment, a method of accessing a memory cell in an integrated circuit, wherein the integrated circuit has a memory cell field including a plurality of memory cells. The method includes selecting a word line voltage identifier from a pre-stored set of word line voltage identifiers, each one of the pre-stored set of word line voltage identifiers being assigned to at least one of the memory cells in the memory cell field and accessing the memory cell using a word line voltage being dependent on the selected word line voltage identifier.

Abstract: A method performs test measurements on electrical components. The components are firstly subjected to an aging process before the actual test measurements are performed on them. In order to be able to handle this in a particularly simple manner, the components are firstly disposed on a carrier with a switching matrix. In this case, the switching matrix is configured in such a way that all the components are switched on for the purpose of carrying out the aging process and exclusively the components to be measured—individually or in subgroups—are switched on for the purpose of carrying out the test measurements.

Abstract: A method of calculating yield loss of semiconductor wafers which are tested with a test sequence to derive a total fail region count for each of the wafers, the semiconductor wafers having multiple chips thereon. The method comprises calculating a fail region count for each of the tests in the test sequence, calculating the test sequence limited yield loss for each of the wafers, and apportioning the test sequence limited yield loss to selected ones of the test based upon the absolute or cumulative number of fails identified by the tests of the test sequence. In some embodiments, core parametric test data is correlated with the test sequence limited yield and analyzed to determine reparability.

Abstract: A semiconductor device is provided having at least two neighboring transistors and an STI region therebetween. The STI region is provided with a voltage bias to minimize subthreshold leakage current between the neighboring transistors. A method of fabricating such a semiconductor device is also provided.

Abstract: A system and method for determining the accuracy of the states of fuses by changing, or not changing, the state of additional fuses. The system includes a memory including addressable storage elements, address fuses whereby each fuse includes a link in a connected or disconnected state and the collective state of the address fuses identifies an address value, a parity fuse whereby the fuse includes a link in a connected or disconnected state and the state of the parity fuse represents a parity value, the parity value being based on, but not equivalent to, the address of an addressable storage element, and; an output providing a value dependant upon the address value and the parity value.

Abstract: A method of calculating yield loss of semiconductor wafers which are tested with a test sequence to derive a total fail region count for each of the wafers, the semiconductor wafers having multiple chips thereon. The method comprises calculating a fail region count for each of the tests in the test sequence, calculating the test sequence limited yield loss for each of the wafers, and apportioning the test sequence limited yield loss to selected ones of the test based upon the absolute or cumulative number of fails identified by the tests of the test sequence. In some embodiments, core parametric test data is correlated with the test sequence limited yield and analyzed to determine reparability.

Abstract: A system and method for determining the accuracy of the states of fuses by changing, or not changing, the state of additional fuses.

Abstract: A semiconductor device is provided having at least two neighboring transistors and an STI region therebetween. The STI region is provided with a voltage bias to minimize subthreshold leakage current between the neighboring transistors. A method of fabricating such a semiconductor device is also provided.

Abstract: A deep trench capacitor, in accordance with the present invention, includes a deep trench formed in a substrate having a storage node formed therein. A center node is capacitively coupled to the storage node. The center node is disposed within the deep trench and formed inside the storage node. A first buried strap is provided for accessing the storage node, and a second buried strap is electrically isolated from the storage node and formed in contact with the center node and a buried plate. The center node is formed to provide additional capacitive area to the deep trench capacitor. A method for forming the deep trench capacitor in accordance with the present invention is also provided.