Abstract: A method for controlling an SCR-type switch, comprising applying to the switch gate several periods of an unrectified high-frequency voltage, the power of one HF halfwave being insufficient to start the SCR-type switch.

Abstract: The invention relates to a vertical-type power switch disposed in a semi-conductor chip, comprising a winding (30) located on the periphery of at least one face of said chip. Said winding comprises two binding posts (31, 32) which supply a signal that is proportional to the current fluctuations in said switch.

Abstract: A constant current generator connected between first and second terminals includes a gate turn-off thyristor in series with a resistor; a current limiting component connected between the anode gate and the cathode gate of the thyristor; and a voltage reference connected between the cathode and the cathode gate of the thyristor.

Abstract: A capacitive microsensor formed on a wafer, including a conductive detection area arranged on a first surface or front surface of the wafer; a conductive via crossing the wafer and emerging on said area; and a structure to ensure contact with said via on the second surface or rear surface of the wafer.

Abstract: The invention concerns a control circuit for controlling a power switch by means of a galvanic insulation transformer, the transformer being produced in the form of planar conductive windings on an insulating substrate (20) whereon are integrated passive components constituting a high frequency excitation oscillating circuit for a primary winding of the transformer, the transformer substrate being directly mounted on a wafer (24) whereon is mounted a circuit chip (40) integrating the power switch.

Abstract: A clipping device intended for absorbing current peaks from 1 to 10 amperes, formed of a vertical NPN transistor, having an unconnected base, an emitter connected to a terminal on which positive voltage peaks are likely to appear, and a grounded collector, the transistor parameters being set so that it exhibits a negative dynamic resistance.

Abstract: A method for controlling an SCR-type switch, consisting of applying on the switch gate several periods of an unrectified high-frequency voltage, the power of one HF halfwave being insufficient to start the SCR-type switch.

Abstract: The invention relates to a vertical-type power switch disposed in a semi-conductor chip, comprising a winding (30) located on the periphery of at least one face of said chip. Said winding comprises two binding posts (31, 32) which supply a signal that is proportional to the current fluctuations in said switch.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

Abstract: The invention concerns a control circuit for controlling a load to be supplied in alternating current voltage, comprising a two-way switch capable of being controlled by phase angle, in series with the load between two terminals applying the alternating current supply, and comprising, in parallel with the switch, a first resistive element, a first capacitor and an element, in series with the first resistive element and the first capacitor, and operating, in steady state conditions, as a constant current source, the midpoint of the association in series connection of the first resistive element and the first capacitor being connected, via an element with two-way conduction automatically triggered when the voltage at its terminals exceeds a predetermined threshold, to a terminal controlling the switch.

Abstract: The invention concerns a control circuit for controlling a power switch by means of a galvanic insulation transformer, the transformer being produced in the form of planar conductive windings on an insulating substrate (20) whereon are integrated passive components constituting a high frequency excitation oscillating circuit for a primary winding of the transformer, the transformer substrate being directly mounted on a wafer (24) whereon is mounted a circuit chip (40) integrating the power switch.

Abstract: The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.

Abstract: The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.

Abstract: A capacitive microsensor formed on a wafer, including a conductive detection area arranged on a first surface or front surface of the wafer; a conductive via crossing the wafer and emerging on said area; and a structure to ensure contact with said via on the second surface or rear surface of the wafer.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

Abstract: The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.

Abstract: A clipping device intended for absorbing current peaks from 1 to 10 amperes, formed of a vertical NPN transistor, having an unconnected base, an emitter connected to a terminal on which positive voltage peaks are likely to appear, and a grounded collector, the transistor parameters being set so that it exhibits a negative dynamic resistance.

Abstract: A design for an overvoltage protection circuit can be used to fabricate several different circuits incorporating different protection techniques. The design is suitable for use in a single device, which can be easily and inexpensively packaged and protected from the environment. Three terminal protection circuits can have three terminals on an upper surface of a substrate, or one terminal on a lower surface of the substrate, using a single modular design. Additional circuitry can be included to sense for high current conditions which are caused by overvoltages too low to trigger the normal overvoltage protection circuits.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.