Abstract: An electric machine includes a rotor having a magnetic field generating device for generating a magnetic flux. A flux changing apparatus of the electric machine includes an axially displaceable body that is disposed axially outside the magnetic field generating device for changing a magnetic flux within a gap between the rotor and a stator in dependence upon an axial position of the body relative to the rotor. The flux changing apparatus includes an adjusting device for axially adjusting the axial position of the body relative to the rotor. The adjusting device includes an actuator and an adjusting element. The actuator acts on the body via the adjusting element. The adjusting element engages the body and/or the actuator in such a manner that a rotational movement of the body can be decoupled from the adjusting element, a housing of the electric machine, the rotor and/or the actuator.

Abstract: An electric machine includes a rotor having a magnetic field generating device for generating a magnetic flux. A flux changing apparatus of the electric machine includes an axially displaceable body that is disposed axially outside the magnetic field generating device for changing a magnetic flux within a gap between the rotor and a stator in dependence upon an axial position of the body relative to the rotor. The flux changing apparatus includes an adjusting device for axially adjusting the axial position of the body relative to the rotor. The adjusting device includes an actuator and an adjusting element. The actuator acts on the body via the adjusting element. The adjusting element engages the body and/or the actuator in such a manner that a rotational movement of the body can be decoupled from the adjusting element, a housing of the electric machine, the rotor and/or the actuator.

Abstract: An electric drive includes a motor assembly, an output assembly, a transmission stage and one or more power electronics units connected to one or more electric voltage sources in order to control electrical sub-phases of electric machines of the motor assembly. The electric machines have motor shafts disposed parallel to one another. The transmission stage is connected to the motor assembly and also connected to the output assembly. The transmission stage has a transmission sun connected to the output assembly and has a plurality of transmission planets each connected to a respective one of the electric machines. The transmission planets are each fixed on a respective one of the motor shafts and are disposed in an annular manner around the transmission sun and roll on the transmission sun in a torque-transmitting manner. A method for operating an electric drive and a serial hybrid drive train are also provided.

Abstract: An electric drive includes a motor assembly, an output assembly, a transmission stage and one or more power electronics units connected to one or more electric voltage sources in order to control electrical sub-phases of electric machines of the motor assembly. The electric machines have motor shafts disposed parallel to one another. The transmission stage is connected to the motor assembly and also connected to the output assembly. The transmission stage has a transmission sun connected to the output assembly and has a plurality of transmission planets each connected to a respective one of the electric machines. The transmission planets are each fixed on a respective one of the motor shafts and are disposed in an annular manner around the transmission sun and roll on the transmission sun in a torque-transmitting manner. A method for operating an electric drive and a serial hybrid drive train are also provided.

Abstract: An electric drive includes a motor configuration with a plurality of electric machines, an output configuration, and a transmission stage. The output configuration has a summing stage configured as a Ravigneaux set with a summing internal gear, a summing spider, two sets of summing planets, and two summing suns. The transmission stage has a transmission sun, transmission planets, and a rotatably mounted transmission internal gear. The transmission sun is connected to the output configuration. The transmission planets are each connected to a respective one of the electric machines. The transmission planets roll on the transmission sun and on the transmission internal gear in a torque-transmitting manner. The transmission internal gear is fixedly connected to one of the two summing suns. The transmission sun is fixedly connected to another one of the two summing suns. A drive configuration for a motor vehicle is also provided.

Abstract: An electric drive includes a motor configuration with a plurality of electric machines, an output configuration, and a transmission stage. The output configuration has a summing stage configured as a Ravigneaux set with a summing internal gear, a summing spider, two sets of summing planets, and two summing suns. The transmission stage has a transmission sun, transmission planets, and a rotatably mounted transmission internal gear. The transmission sun is connected to the output configuration. The transmission planets are each connected to a respective one of the electric machines. The transmission planets roll on the transmission sun and on the transmission internal gear in a torque-transmitting manner. The transmission internal gear is fixedly connected to one of the two summing suns. The transmission sun is fixedly connected to another one of the two summing suns. A drive configuration for a motor vehicle is also provided.

Abstract: A control circuit for controlling an electronic circuit, which has a current path through a semiconductor switch and a line; when the semiconductor switch is switched, the inductance of the line and/or of a component in the current path producing an excess voltage between a first and a second current-carrying terminal of the semiconductor switch; the control circuit having a controllable current source for charging or discharging a charge-controlled gate of the semiconductor switch with the aid of a control current, as well as a control unit; the control unit controlling the current source in such a manner, that in the case of a switching operation, the terminal voltage across the current-carrying terminals of the semiconductor switch does not exceed a predefined setpoint terminal voltage.

Abstract: A control circuit for controlling an electronic circuit, which has a current path through a semiconductor switch and a line; when the semiconductor switch is switched, the inductance of the line and/or of a component in the current path producing an excess voltage between a first and a second current-carrying terminal of the semiconductor switch; the control circuit having a controllable current source for charging or discharging a charge-controlled gate of the semiconductor switch with the aid of a control current, as well as a control unit; the control unit controlling the current source in such a manner, that in the case of a switching operation, the terminal voltage across the current-carrying terminals of the semiconductor switch does not exceed a predefined setpoint terminal voltage.

Abstract: A semiconductor power component having an anode contact on the reverse side, an emitter region of a first conductor type on the reverse side, which is connected to the anode contact on the reverse side, a drift zone which is connected to the emitter region that is on the reverse side and extends partially to the front surface, an MOS control structure on the front side, having a control contact positioned in insulated fashion, a cathode contact on a front side which is connected to a source region and a first body region. The drift zone has first and second drift region of a second conductor type and a third drift region of first conductor type. First drift region is a buried region, second drift region connects the front surface to first drift region, and third drift region connects the first and/or second body region to first drift region.

Abstract: A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Abstract: A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 ?m.

Abstract: An inverter for an electric machine is specified that includes a plurality of switching elements, in particular six, which are positioned in a bridge circuit and produce a connection between the electric machine and a battery. The switching elements built into the low-side branch of the inverter are ones that are conductive without a control voltage present, i.e., normally-on switching elements. That ensures that if the supply voltage is absent and the electric machine is rotating the windings of the electric machine are short circuited and no overvoltages are able to occur. In normal operation the inverter is operated like a conventional inverter, by clocked actuation, but with reversed actuation of the control electrodes, i.e., with control voltage for non-conductive time phases and without control voltage in conductive phases.

Abstract: A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Abstract: An inverter for an electric machine is specified that includes a plurality of switching elements, in particular six, which are positioned in a bridge circuit and produce a connection between the electric machine and a battery. The switching elements built into the low-side branch of the inverter are ones that are conductive without a control voltage present, i.e., normally-on switching elements. That ensures that if the supply voltage is absent and the electric machine is rotating the windings of the electric machine are short circuited and no overvoltages are able to occur. In normal operation the inverter is operated like a conventional inverter, by clocked actuation, but with reversed actuation of the control electrodes, i.e., with control voltage for non-conductive time phases and without control voltage in conductive phases.

Abstract: The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region of a first charge carrier doping; at least two second charge carrier regions with opposite charge carrier doping, patterned within the first charge carrier region at a spacing from one another, and third charge carrier regions, with the first charge carrier doping, patterned within the second charge carrier regions, a PN transition being short-circuited between the second charge carrier regions and the third charge carrier regions via a contacting area (source connection), the first charge carrier region being equipped with a contact (drain connection), and the second charge carrier regions being invertable by means of a contacting area in the region between the first charge carrier region and the third charge carrier region; and having at least one Schottky diode connected in parallel with the charge carrier region and the charge carrier region.

Abstract: A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one another. A zone having the same type of conductivity as the drain region yet a higher doping than that of the drain region is situated upstream from a pn junction of one of the MOS transistors in a junction area with the drain region.

Abstract: The present invention creates a semiconductor power component having an anode contact (502) on the reverse side; an emitter region (505) of a first conductor type (p+), on the reverse side, which is connected to the anode contact (502) on the reverse side; a drift zone (504, 514, 540) which is connected to the emitter region (505) that is on the reverse side and extends partially to the front surface; an MOS control structure (503, 506, 560, 508, 580, 509) on the front side, having a control contact (503) that is positioned in insulated fashion; a cathode contact (501) on the front side which is connected to a source region (506) and a first body region (508). Drift zone (504, 514, 540) has a first drift region (540) of second conductor type (n−), a second drift region (504) of second conductor type (n) and a third drift region (514) of first conductor type (p). First drift region (540) is a buried region. Second drift region (504) connects the front surface to first drift region (540).

Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Abstract: The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region (12) of a first charge carrier doping; at least two second charge carrier regions (14) with opposite charge carrier doping, patterned within the first charge carrier region (12) at a spacing from one another; and third charge carrier regions (16), with the first charge carrier doping, patterned within the second charge carrier regions (14), a PN transition (22) being short-circuited between the second charge carrier regions (14) and the third charge carrier regions (16) via a contacting area (20) (source connection), the first charge carrier region (12) being equipped with a contact (18) (drain connection), and the second charge carrier regions (14) being invertable by means of a contacting area (26) in the region between the first charge carrier region (12) and the third charge carrier region (16); and having at least one Schottky diode (30) connected in parallel with the charge carrier region (12

Abstract: A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &mgr;m.