Abstract: Tungsten precursors with high purity and methods for purifying tungsten precursors are provided. The method for purifying a precursor may comprise at least one of the following steps: obtaining a source vessel containing WCl4, WOCl4, and one of WCl5 or WCl6; separating the WCl5 or the WCl6 from at least a first portion of the WOCl4; separating the WCl5 or the WCl6 from at least a second portion of the WOCl4; recovering a precursor in a collection vessel; or any combination thereof.

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

Abstract: A dynamic data display system and associated method of usage. A portion of a data feed is dynamically displayed, such as in spreadsheet format, on a main drawer D0 that overlays a display screen. N additional drawers D1, D2, . . . , DN are positioned such that D1 conditionally overlays D0, D2 conditionally overlays D1, . . . , DN conditionally overlays DN?1. N is at least 2. Each drawer Di (i=1, 2, . . . , N) is adapted to being opened or to being closed. A user command is directed to a first drawer of the N additional drawers, which causes content on a second drawer of the N additional drawers to be displayed in accordance with the user command.

Abstract: A dynamic data display system and associated method of usage. A portion of a data feed is dynamically displayed, such as in spreadsheet format, on a main drawer D0 that overlays a display screen. N additional drawers D1, D2, . . . , DN are positioned such that D1 conditionally overlays D0, D2 conditionally overlays D1, . . . , DN conditionally overlays DN−1. N is at least 2. Each drawer Di (i=1, 2, . . . , N) is adapted to being opened or to being closed. A user command is directed to a first drawer of the N additional drawers, which causes content on a second drawer of the N additional drawers to be displayed in accordance with the user command.