Abstract: An airflow management system for an information handling system. The airflow management system includes a fan system; and, an airflow management device, the airflow management device including an airflow shroud component, the airflow shroud component having a fan system airflow inlet and a component array airflow outlet, the fan system airflow inlet having a corresponding fan system airflow inlet area, the component array airflow outlet having a corresponding component array airflow outlet area, the fan system airflow inlet area being larger than the component array airflow outlet area, the airflow shroud component optimizing airflow between the fan system airflow inlet and the component array airflow outlet.

Abstract: A thermal transfer system for use with an information handling system. The thermal transfer system includes a fan component and a multi stage heat sink system. The multi stage heat sink system includes: a primary heat sink component, the primary heat sink component being thermally coupled to a heat producing component within the information handling system, the primary heat sink component providing a primary heat sink thermal transfer stage; a secondary heat sink component, the secondary heat sink component providing a secondary heat sink thermal transfer stage; and, a thermal coupling component, the secondary heat sink component being thermally coupled with the primary heat sink component via the thermal coupling component, the secondary heat sink component providing additional surface area for transferring thermal energy away from the heat producing component.

Abstract: A modular test system includes a modular controller subsystem coupled to a modular tested subsystem by a modular intermediary subsystem. The modular intermediary subsystem transmits communications between the modular controller subsystem and the modular tested subsystem during testing operations performed by the modular controller subsystem, and performs at least one testing function that is not available in the modular controller subsystem during the testing operations performed by the modular controller subsystem.

Abstract: A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Abstract: A data retention event preparation/recovery system includes a chassis, a plurality of NAND subsystems included in the chassis, and a data retention event preparation/recovery subsystem that is included in the chassis and coupled to the plurality of NAND subsystems. The data retention event preparation/recovery subsystem determines that the plurality of NAND subsystems will experience a data retention event and, in response, identifies a first subset of the plurality of NAND subsystems that exceed an error threshold, identifies at least one overprovisioned block in the plurality of NAND subsystem, copies data that is stored on the first subset of the plurality of NAND subsystems to the at least one overprovisioned block in the plurality of NAND subsystems, and power offs the plurality of NAND subsystems to begin the data retention event.

Abstract: A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem that is coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a first error correction hard decoding operation on the storage subsystem that utilizes first read voltage thresholds and that generates a first final codeword candidate having a first syndrome weight. The syndrome-weight-based error correction subsystem then performs error correction hard decoding read voltage threshold real-time search operations to determine second read voltage thresholds, and performs a second error correction hard decoding operation on the storage subsystem that utilizes the second read voltage thresholds and that generates a second final codeword candidate having a second syndrome weight.

Abstract: A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a plurality of respective first error correction hard decoding operations on the storage subsystem that each utilize respective read voltage thresholds and that each generate a respective final codeword candidate having a respective syndrome weight.

Abstract: A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a plurality of respective first error correction hard decoding operations on the storage subsystem that each utilize respective read voltage thresholds and that each generate a respective final codeword candidate having a respective syndrome weight.

Abstract: A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem that is coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a first error correction hard decoding operation on the storage subsystem that utilizes first read voltage thresholds and that generates a first final codeword candidate having a first syndrome weight. The syndrome-weight-based error correction subsystem then performs error correction hard decoding read voltage threshold real-time search operations to determine second read voltage thresholds, and performs a second error correction hard decoding operation on the storage subsystem that utilizes the second read voltage thresholds and that generates a second final codeword candidate having a second syndrome weight.

Abstract: A data retention event preparation/recovery system includes a chassis, a plurality of NAND subsystems included in the chassis, and a data retention event preparation/recovery subsystem that is included in the chassis and coupled to the plurality of NAND subsystems. The data retention event preparation/recovery subsystem determines that the plurality of NAND subsystems will experience a data retention event and, in response, identifies a first subset of the plurality of NAND subsystems that exceed an error threshold, identifies at least one overprovisioned block in the plurality of NAND subsystem, copies data that is stored on the first subset of the plurality of NAND subsystems to the at least one overprovisioned block in the plurality of NAND subsystems, and power offs the plurality of NAND subsystems to begin the data retention event.

Abstract: This invention relates to a method to assess nodal disease by magnetic resonance imaging with a contrast agent. The contrast agent comprises biofunctional magnetic nanoparticles coated with polymers outside the iron core and conjugated with antibodies specific to the tumor type to be assessed. Images produced from this magnetic resonance imaging with a contrast agent show heterogenous hypo intensity or heterogenous architecture in regions where binding by the antibodies is present.

Abstract: A pseudo Single Level Cell (pSLC)-scan-based storage device initialization system includes a chassis, a storage subsystem that is housed in the chassis, and a pSLC-scan-based storage device initialization subsystem that is housed in the chassis and coupled to the storage subsystem. The pSLC-scan-based storage device initialization subsystem reads respective subsets of pSLC data from the storage subsystem over a plurality of different read voltage thresholds, and identifies a first read voltage threshold that is included in the plurality of different read voltage thresholds and at which a respective first subset of the pSLC data read from the storage subsystem experienced errors within a predetermined error range.

Abstract: A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Abstract: A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Abstract: A storage subsystem read voltage determination system coupled to a first storage subsystem may read data from the first storage subsystem at a plurality of different read voltage sets and, for each of the plurality of read voltage sets, generate a respective bit error probability distribution of a number of bit errors per codeword provided by the data read from the first storage subsystem. The storage subsystem read voltage provisioning system also generates an error correction capability graph associated with error correction code used by the first storage subsystem and, based on the bit error probability distributions and the error correction capability graph, generates a respective average codeword error rate for each of the plurality of read voltage sets. The storage subsystem read voltage provisioning system then identifies a first read voltage set for which a minimum average codeword error rate was determined.

Abstract: A storage subsystem read voltage determination system coupled to a first storage subsystem may read data from the first storage subsystem at a plurality of different read voltage sets and, for each of the plurality of read voltage sets, generate a respective bit error probability distribution of a number of bit errors per codeword provided by the data read from the first storage subsystem. The storage subsystem read voltage provisioning system also generates an error correction capability graph associated with error correction code used by the first storage subsystem and, based on the bit error probability distributions and the error correction capability graph, generates a respective average codeword error rate for each of the plurality of read voltage sets. The storage subsystem read voltage provisioning system then identifies a first read voltage set for which a minimum average codeword error rate was determined.

Abstract: A modular test system includes a modular controller subsystem coupled to a modular tested subsystem by a modular intermediary subsystem. The modular intermediary subsystem transmits communications between the modular controller subsystem and the modular tested subsystem during testing operations performed by the modular controller subsystem, and performs at least one testing function that is not available in the modular controller subsystem during the testing operations performed by the modular controller subsystem.

Abstract: A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Abstract: A storage device reclassification system includes a storage device reclassification subsystem coupled to a storage device that has a NAND storage subsystem and that is configured to perform first storage operations associated with a first storage device classification. The storage device reclassification subsystem performs testing operations on the NAND storage subsystem and, based on the testing operations, identifies at least one reduced capability of the NAND storage subsystem. Based on the at least one reduced capability of the NAND storage subsystem, the storage device reclassification subsystem determines at least one storage device operation modification and performs the at least one storage device operation modification on the storage device in order to configure the storage device to perform second storage operations that are different than the first storage operations and that are associated with a second storage device classification that is different than the first storage device classification.

Abstract: This disclosure relates to barrier compositions. The barrier composition can comprise a copolymer formed by polymerizing monomers comprising derived from a vinyl aromatic monomer and a second monomer selected from the group consisting of butadiene, alkyl (meth)acrylates, and mixtures thereof, and a solid grade oligomer. In some embodiments, the vinyl aromatic monomer and the second monomer are polymerized in the presence of the solid grade oligomer. Paper products and methods of making the paper products comprising the barrier composition are also described herein. The barrier compositions disclosed herein can be used to impart water, moisture, grease, oil, and/or oxygen resistance to the paper product.