Abstract: The disclosure relates to a method for operating a motor vehicle, comprising collecting swarm speed data from a plurality of vehicles other than the motor vehicle along a trajectory of the motor vehicle, wherein the swarm speed data include speed data for straight-ahead travel and speed data for turning travel, determining if there is a turn request of the vehicle, and in response to determining that there is the turn request controlling, the motor vehicle based on the speed data for the turning travel.

Abstract: A light time-of-flight pixel comprising at least one modulation gate (GA, GB) having a mixing and a transfer region (TA, TB), and comprising at least one storage region (SGA, SGB), the transfer region (TA, TB) being arranged between the mixing region and the storage region (SGA, SGB), the transfer region being doped in such a way that a modulation gate voltage present at the modulation gate (GA, GB) opens or closes charge transfer to the storage region (SGA, SGB).

Abstract: The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.

Abstract: The invention relates to a light transit time pixel comprising —at least one modulation gate (GA, GB) which has a photoactive region (FAB) and a storage region (MA, MB), said storage region (MA, MB) having a locally increased n-type doping below the modulation gate (GA, GB) and delimiting the photoactive region (FAB) of the modulation gate (GA, GB), —at least one transfer gate (TXA, TXB) which adjoins the storage region (MA, MB) of the modulation gate (GA, GB), —at least one reading diode (DA, DB) which follows the transfer gate (TXA, TXB), —at least one drain gate (DG) which adjoins one side of the light-sensitive region (FAB) of the modulation gate (GA, GB), and —at least one drain diode (DD) which follows the drain gate (DG).

Abstract: The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.