Abstract: A beam delivery system is provided that includes a beam delivery photonic integrated circuit. The beam delivery photonic integrated circuit includes one or more optical inputs; a plurality of waveguide outputs; and a plurality of beam paths. Each beam path connects one of the plurality of waveguide outputs to at least one of the optical inputs. The plurality of waveguide outputs are configured to emit a plurality of parallel beams. The beam delivery photonic integrated circuit is on a chip. The beam delivery system further includes a telecentric optical relay assembly. The telecentric optical relay assembly is configured to receive the plurality of parallel beams provided by the waveguide outputs and focus each received beam on a corresponding one of a plurality of positions of an atomic object confinement apparatus in a telecentric manner.

Abstract: A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficient than the first superconductor material and/or the second superconductor material has a lower recombination coefficient than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.

Abstract: Multilayer films and adhesive tapes that include such films, wherein the multilayer films include plasticized polyvinyl chloride and optionally one or more fillers.

Abstract: A wafer bonding method includes placing a first wafer on a first bonding framework including a plurality of outlet holes around a periphery of the first bonding framework. A second wafer is placed on a second bonding framework that includes a plurality of inlet holes around a periphery of the second bonding framework. The first bonding framework is in overlapping relation to the second bonding framework such that a gap exist between the first wafer and the second wafer. A gas stream is circulated through the gap between the first wafer and the second wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the first wafer and the second wafer.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: A wafer bonding method includes placing a first wafer on a first bonding framework including a plurality of outlet holes around a periphery of the first bonding framework. A second wafer is placed on a second bonding framework that includes a plurality of inlet holes around a periphery of the second bonding framework. The first bonding framework is in overlapping relation to the second bonding framework such that a gap exist between the first wafer and the second wafer. A gas stream is circulated through the gap between the first wafer and the second wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the first wafer and the second wafer.

Abstract: A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI3) vapor from a GaI3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.

Abstract: A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI3) vapor from a GaI3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

Abstract: An apparatus for implementing an emergency machine off circuit of a fabrication system, includes: at least one safety switch adapted for shunting an operation enable signal from a piece of equipment selected for removal from service, the switch also removing from service supplemental devices for the selected equipment. A semiconductor fabrication system and a method for removing equipment from service are provided.

Abstract: An apparatus for implementing an emergency machine off circuit of a fabrication system, includes: at least one safety switch adapted for shunting an operation enable signal from a piece of equipment selected for removal from service, the switch also removing from service supplemental devices for the selected equipment. A semiconductor fabrication system and a method for removing equipment from service are provided.

Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract: An arrangement for aligning a semiconductor process tool to a track system, and a method which facilitates the calibration and alignment between a previously installed overhead transport system in a fabrication facility or plant for semiconductor wafers or integrated circuit components, and a plurality of load ports on a process tool for the semiconductor wafer or integrated circuit components, which is to be subsequently installed in the fabrication facility.

Abstract: A vane type hydraulic energy translating device for pumping filtered seawater and which uses seawater as a lubricating fluid. The pump is a compact, light weight design in which the bearings and certain other critical components are fabricated from corrosion resistant, low friction, high strength materials. The vanes as well as flexible side plate members are formed of these corrosion resistant materials. The pump body is formed of high corrosion resistant stainless steel. The side plates are flexible and act as wear surfaces for the ends of the vanes as well as sealing surfaces about the rotor thereby preventing leakage of seawater from high to low pressure areas. Each vane is spring biased radially outward from the rotor axis with four springs disposed within apertures located in the vane base. The vanes are generally rectangular in shape and have an outer end portion which serves as a sliding seal against a cam ring track.

Abstract: A gland seal for a dynamoelectric machine which utilizes a passage through a ring member for conducting a relatively low pressure gas between a first axial face and a second axial face of the ring member. The seal also includes a relief portion in the first axial face whereby the ring member is forced against the high pressure side of the gland seal thereby diminishing the flow of oil to the high pressure side which is desirable in a hydrogen-cooled generator system.

Abstract: A hermetic refrigerant compressor having an electric motor and compressor assembly in a hermetic shell is cooled by oil which is first cooled in an external cooler 18 and is then delivered through the shell to the top of the motor rotor 24 where most of it is flung radially outwardly within the confined space provided by the cap 50 which channels the flow of most of the oil around the top of the stator 26 and then out to a multiplicity of holes 52 to flow down to the sump and provide further cooling of the motor and compressor. Part of the oil descends internally of the motor to the annular chamber 58 to provide oil cooling of the lower part of the motor, with this oil exiting through vent hole 62 also to the sump. Suction gas with entrained oil and liquid refrigerant therein is delivered to an oil separator 68 from which the suction gas passes by a confined path in pipe 66 to the suction plenum 64 and the separated oil drops from the separator to the sump.