Abstract: An electroplating system to process a substrate includes clamps and a membrane. The membrane is held by the clamps and separates a first portion of a chamber of the electroplating system from a second portion of the chamber. The membrane includes a surface extending from a center of a cavity of the chamber radially outward at an angle relative to a reference plane. The angle is greater than or equal to 0° and less than or equal to 3°.

Abstract: In one example, the disclosed apparatus is a substrate contact-ring to support a substrate. The substrate contact-ring includes a peripheral structure sized and configured to support the substrate within the substrate contact-ring. The peripheral structure includes a substantially flat ring-section, and a spaced array of contact fingers mechanically coupled to the substantially flat ring-section. Each of the spaced array of contact fingers is resiliently movable to engage an edge of the substrate supported within the substrate contact-ring. A proximal end of each of the contact fingers is mechanically coupled to the flat ring section of the substrate contact-ring and a distal end of each of the contact fingers is resiliently movable radially inwardly and outwardly of the substrate contact-ring to alternately engage and release the edge of the substrate when the substrate is alternately being supported or removed from the substrate contact-ring. Other apparatuses and methods are disclosed.

Abstract: Examples are disclosed herein that relate to characterizing a plating gap between an anode structure and a cathode in an electrodeposition tool. One example provides a fixture for characterizing a spacing of a plating gap of an electrodeposition tool. The fixture comprises a substrate holder interface configured to contact a seal of a substrate holder of the electrodeposition tool. The fixture further comprises a protrusion comprising a contact surface configured to contact the anode structure of the electrodeposition tool during a plating gap characterization process. A thickness dimension comprising a distance between a plane of the substrate holder interface and the contact surface of the protrusion corresponds to a preselected plating gap spacing.

Abstract: A cell to process a substrate includes at least one chamber wall, a membrane frame, and a membrane. The at least one chamber wall is arranged to form a cavity below a holder of the substrate. The membrane frame is disposed on the at least one chamber wall and across the cavity. The membrane is supported by the membrane frame and separating a first electrolyte from a second electrolyte. The membrane includes a surface extending from a center of the cavity radially outward at an angle relative to a reference plane, and wherein the angle is greater than or equal to 0° and less than or equal to 3°.

Abstract: A concentration of a dissolved gas can be controlled by following an electroplating solution through a contactor, controlling a pressure within the contactor, and thereby maintaining the concentration of the dissolved gas in the electroplating solution within a first concentration range. The first concentration range is non-zero and sub-saturation.

Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.

Abstract: An ionically resistive ionically permeable element for use in an electroplating apparatus includes ribs to tailor hydrodynamic environment proximate a substrate during electroplating. In one implementation, the ionically resistive ionically permeable element includes a channeled portion that is at least coextensive with a plating face of the substrate, and a plurality of ribs extending from the substrate-facing surface of the channeled portion towards the substrate. Ribs include a first plurality of ribs of full maximum height and a second plurality of ribs of smaller maximum height than the full maximum height. In one implementation the ribs of smaller maximum height are disposed such that the maximum height of the ribs gradually increases in a direction from one edge of the element to the center of the element.

Abstract: A contact for providing a connection to a substrate in a substrate plating system includes a body having an arcuate shape. The arcuate shape of the body is configured to conform to a shape of at least a portion of a substrate arranged on a lip seal and a cup of the substrate plating system. A plurality of first contact fingers extend a first distance from the body. A plurality of second contact fingers extend a second distance from the body. The first distance is greater than the second distance.

Abstract: An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: A cell to process a substrate includes at least one chamber wall, a membrane frame, and a membrane. The at least one chamber wall is arranged to form a cavity below a holder of the substrate. The membrane frame is disposed on the at least one chamber wall and across the cavity. The membrane is supported by the membrane frame and separating a first electrolyte from a second electrolyte. The membrane includes a surface extending from a center of the cavity radially outward at an angle relative to a reference plane, and wherein the angle is greater than or equal to 0° and less than or equal to 3°.

Abstract: In one example, the disclosed apparatus is a substrate contact-ring to support a substrate. The substrate contact-ring includes a peripheral structure sized and configured to support the substrate within the substrate contact-ring. The peripheral structure includes a substantially flat ring-section, and a spaced array of contact fingers mechanically coupled to the substantially flat ring-section. Each of the spaced array of contact fingers is resiliently movable to engage an edge of the substrate supported within the substrate contact-ring. A proximal end of each of the contact fingers is mechanically coupled to the flat ring section of the substrate contact-ring and a distal end of each of the contact fingers is resiliently movable radially inwardly and outwardly of the substrate contact-ring to alternately engage and release the edge of the substrate when the substrate is alternately being supported or removed from the substrate contact-ring. Other apparatuses and methods are disclosed.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Abstract: Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.