Patents by Inventor Robert Reedy

Robert Reedy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic modules incorporating lateral heat removal
    Patent number: 10361327
    Abstract: In one embodiment, a photovoltaic module includes a stack of layers, the module having an active layer and a planar heat sink positioned within the stack of layers adjacent the active layer, the heat sink being adapted to laterally remove heat from the active layer and the module.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: July 23, 2019
    Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION
    Inventors: Nicoleta Sorloaica, Robert Reedy
  • Photovoltaic Modules Incorporating Lateral Heat Removal
    Publication number: 20140261682
    Abstract: In one embodiment, a photovoltaic module includes a stack of layers, the module having an active layer and a planar heat sink positioned within the stack of layers adjacent the active layer, the heat sink being adapted to laterally remove heat from the active layer and the module.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: University of Central Florida Research Foundation, Inc.
    Inventors: Nicoleta Sorloaica, Robert Reedy
  • REACTIVE CODOPING OF GaAlInP COMPOUND SEMICONDUCTORS
    Publication number: 20110233730
    Abstract: A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phosphine gas, Zn vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and group VIB vapors produce a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
    Type: Application
    Filed: February 8, 2008
    Publication date: September 29, 2011
    Inventors: Mark Cooper Hanna, Robert Reedy
  • Reactive codoping of GaAlInP compound semiconductors
    Patent number: 7329554
    Abstract: A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: February 12, 2008
    Assignee: Midwest Research Institute
    Inventors: Mark Cooper Hanna, Robert Reedy
  • Reactive codoping of gaalinp compound semiconductors
    Publication number: 20060252242
    Abstract: A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
    Type: Application
    Filed: October 3, 2005
    Publication date: November 9, 2006
    Inventors: Mark Hanna, Robert Reedy