Abstract: Systems and methods for providing, conducting and modifying wagering games involving standard playing cards to include multiple sources of randomly ordered one or more decks of standard playing cards, either remotely or locally, and electronically or virtually provided cards, or through physical card shuffling sources, from which a player may select to receive cards in the wagering game for any purpose, such as to form initial or final hands in the wagering game.

Abstract: Systems and methods for providing, conducting and modifying wagering games involving standard playing cards to include multiple sources of randomly ordered one or more decks of standard playing cards, either remotely or locally, and electronically or virtually provided cards, or through physical card shuffling sources, from which a player may select to receive cards in the wagering game for any purpose, such as to form initial or final hands in the wagering game.

Abstract: The invention relates to a process for hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850° C. and 1600° C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850° C. and 1600° C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 10% based on hydrogen.

Abstract: The invention relates to a process bit hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850° C. and 1600° C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850° C. and 1600° C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 70% based on hydrogen.

Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.

Abstract: A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C.

Abstract: Disclosed is a method for supplying current to a reactor, wherein electrode(s) of an electrical energy network (EEN), which is DC-isolated from ground potential, is/are fed through a reactor wall and connected to an electrically conductive element (ECE) so that an operating voltage is applied to the ECE and electrical current flows through it. A seal of electrically insulating material is provided between the wall and the electrode. The EEN is monitored for insulation faults. A fall below a particular insulation resistance triggers shutdown of the electrical energy supply. The switching threshold is determined by taking into account at least one of the following parameters: seal geometry, seal material, supply voltage and maximum possible electrical energy input into the seal immediately before shutdown, triggered by the maximum theoretically possible leakage current through the seal. A device and an electrode having respective seals are also disclosed.

Abstract: A device for thermal treatment of corrosive gases includes a chamber for heating gases in which there are at least four heating elements or four groups of heating elements including an electrically conductive material, wherein each heating element or group is connected to a separately regulatable and/or controllable subsystem of an electrical energy network and can thereby be heated by direct current flow, wherein each heating element or group can be controlled or regulated with respect to at least one either identical or different value of a parameter selected from the group consisting of temperature, heating power, current, voltage and resistance, or with respect to another heating element process variable, which can be influenced by the device, and wherein at least four regulatable and/or controllable subsystems are DC-isolated from ground potential. The invention also relates to a corresponding method for the thermal treatment of corrosive gases.

Abstract: A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C.

Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.

Abstract: Disclosed is a method for supplying current to a reactor, wherein electrode(s) of an electrical energy network (EEN), which is DC-isolated from ground potential, is/are fed through a reactor wall and connected to an electrically conductive element (ECE) so that an operating voltage is applied to the ECE and electrical current flows through it. A seal of electrically insulating material is provided between the wall and the electrode. The EEN is monitored for insulation faults. A fall below a particular insulation resistance triggers shutdown of the electrical energy supply. The switching threshold is determined by taking into account at least one of the following parameters: seal geometry, seal material, supply voltage and maximum possible electrical energy input into the seal immediately before shutdown, triggered by the maximum theoretically possible leakage current through the seal. A device and an electrode having respective seals are also disclosed.

Abstract: A device for thermal treatment of corrosive gases includes a chamber for heating gases in which there are at least four heating elements or four groups of heating elements including an electrically conductive material, wherein each heating element or group is connected to a separately regulatable and/or controllable subsystem of an electrical energy network and can thereby be heated by direct current flow, wherein each heating element or group can be controlled or regulated with respect to at least one either identical or different value of a parameter selected from the group consisting of temperature, heating power, current, voltage and resistance, or with respect to another heating element process variable, which can be influenced by the device, and wherein at least four regulatable and/or controllable subsystems are DC-isolated from ground potential. The invention also relates to a corresponding method for the thermal treatment of corrosive gases.

Abstract: High yields of trichlorosilane are achieved in the reaction of tetrachlorosilane and hydrogen at a temperature in the range of 900° C. to 1300° C. and a pressure above the critical pressure of the reactants.

Abstract: High yields of trichlorosilane are achieved in the reaction of tetrachlorosilane and hydrogen at a temperature in the range of 900° C. to 1300° C. and a pressure above the critical pressure of the reactants.

Abstract: Methods for treating and preventing anxiety, anxiety-related disorders, schizophrenia and schizophrenia-related disorders are described herein wherein said methods comprise the administration of oxytocin receptor agonists.

Abstract: An apparatus is provided for positioning a plurality of cassettes within an automated printing plate handler. In a plate handler, a plurality of cassettes each contain a supply of printing plates for delivery to an automatic plate-recording device. The apparatus includes a separate support table for supporting each of the plurality of cassettes within the plate handler and an elevator device for moving each of the support tables along a vertical axis of the automated plate handler. The automated plate handler is configured to automatically position a selected cassette in a first position to facilitate removal of the cassette from the handler. The plate handler further includes a platform, which substantially forms an extension of the support table supporting the selected cassette in the first position. The platform provides a second position, at which the selected cassette is to be one of, loaded or unloaded.

Abstract: The present invention relates to methods of treating at least one vasomotor symptom such as hot flush, caused by, inter alia, thermoregulatory dysfunction, in a subject in need thereof by administering to the subject a compound or composition of compounds that modulate the V1b receptor.