Abstract: A method is described for converting an existing die, originally designed for a non-chip-scale package, to a chip-scale package die, where the die's bonding pads are located in positions within a defined grid of candidate positions. In the first step, the die's layout, comprising its outer boundaries and areas needed to be electrically connected to bonding pads, are shifted relative to a grid of candidate positions for the bonding pads until an optimal alignment is identified. Bonding pads positions on the die are then selected corresponding to optimum grid positions within the outer boundaries of the die. The die is then fabricated using the original masks to form at least the semiconductor regions and using a new set of masks for defining the new locations of the bonding pads for the chip-scale package. The chip-scale package is then bonded to a PCB using chip-scale package technology.

Abstract: A method is described for converting an existing die, originally designed for a non-chip-scale package, to a chip-scale package die, where the die's bonding pads are located in positions within a defined grid of candidate positions. In the first step, the die's layout, comprising its outer boundaries and areas needed to be electrically connected to bonding pads, are shifted relative to a grid of candidate positions for the bonding pads until an optimal alignment is identified. Bonding pads positions on the die are then selected corresponding to optimum grid positions within the outer boundaries of the die. The die is then fabricated using the original masks to form at least the semiconductor regions and using a new set of masks for defining the new locations of the bonding pads for the chip-scale package. The chip-scale package is then bonded to a PCB using chip-scale package technology.

Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described. Another exemplary embodiment illustrated the use of chip-scale processes for interconnecting discrete integrated circuits.

Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described. Another exemplary embodiment illustrated the use of chip-scale processes for interconnecting discrete integrated circuits.

Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described. Another exemplary embodiment illustrated the use of chip-scale processes for interconnecting discrete integrated circuits.

Abstract: A lithographic pattern includes a first scribe along an edge of a die region, and a second scribe along an opposing edge of the die region. The first scribe includes at least a first translucent box and a second translucent box. The second scribe includes at least a first opaque box and a second opaque box defined respectively by a first translucent frame and a second translucent frame. When the lithographic pattern is stepped between fields on a wafer, the first translucent box is placed at least partially within the first opaque box, and the second translucent box is placed at least partially within the second opaque box. If a continuous ring is formed from a pair of a translucent box and an opaque box, the fields are aligned at least within an amount equal to the difference between the dimensions of that translucent box and that opaque box divided by 2.

Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described. Another exemplary embodiment illustrated the use of chip-scale processes for interconnecting discrete integrated circuits.