Patents by Inventor Robert Rurlander

Robert Rurlander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040029316
    Abstract: The invention relates to a method for assembling planar workpieces, whereby a connection, whose adhesiveness and brittleness is temperature-dependent, is made by means of a cement between the planar workpiece and a support plate. The method is characterised in that connected are only partially covered by the cement after the workpiece has been placed on the support plate.
    Type: Application
    Filed: August 20, 2003
    Publication date: February 12, 2004
    Inventors: Anton Schnegg, Robert Rurlander, Markus Schnappauf, Thomas Hubel
  • Patent number: 5051117
    Abstract: A process for removing contaminants, particularly dopant, from halosilane-containing carrier gases, such as those which are produced in the production of high-purity silicon. The process of the invention is perferably carried out with aid of zeolites which has a low proportion of aluminum and are used in the anhydrous state by bringing the zeolites into contact with the carrier gases. Zeolites, after use, can be regenerated and re-used by increasing the temperature and/or decreasing the pressure of the procedure.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: September 24, 1991
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
    Inventors: Helene Prigge, Robert Rurlander, Harald Hoffman, Hans-Peter Bortner
  • Patent number: 4971654
    Abstract: A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.
    Type: Grant
    Filed: August 8, 1988
    Date of Patent: November 20, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Electronik-Grundstoffe mbH
    Inventors: Anton Schnegg, Gerhard Brehm, Helene Prigge, Robert Rurlander, Fritz Ketterl
  • Patent number: 4892568
    Abstract: The liquid or gaseous substances, such as hydrogen or trichlorosilane, enntered in the gas-phase deposition of silicon may contain n-type doping impurities which can be removed by adduct formation with silicon, titanium or tin halides. The impurities can be liberated from the adducts by thermal treatment and finally removed. The halides left behind are capable of again forming adducts and are again used to remove the impurities. The process can consequently be operated cyclically and is remarkable for the low quantity of chemicals required and for its ecological harmlessness.
    Type: Grant
    Filed: January 3, 1989
    Date of Patent: January 9, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
    Inventors: Helene Prigge, Robert Rurlander, Michael Schwab, Hans P. Bortner, Andreas Englmuller
  • Patent number: 4539221
    Abstract: A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between and C., but results in high yields.
    Type: Grant
    Filed: May 7, 1984
    Date of Patent: September 3, 1985
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe m.b.H.
    Inventors: Herbert Jacob, Robert Rurlander, Anton Schnegg