Abstract: A wafer comprises a kerf region and a test chip. The kerf is a region in a wafer designated to be destroyed by chip dicing. The test chip is located within the kerf region and is configured to provide parametric data for a wafer fabrication process of a head. The test chip comprises a shield portion of a first shield layer electrically coupled to an element, a first pad within a second shield layer electrically coupled to the element, and a second pad within the second shield layer electrically coupled to the shield portion.

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract: A test-device system and method for deconvoluting measurements of effects of a sensor-width definition process from measurements of effects of a sensor-stripe-height-definition process in a manufacture of a magnetic sensor. The test-device system comprises a first test device for generating data to characterize a sensor-width-definition process. The test-device system also comprises a second test device for generating data to characterize a sensor-stripe-height-definition process. The test-device system allows independent characterization of a sensor-width parameter and a sensor-stripe-height parameter.

Abstract: Test methods and components are disclosed for testing the quality of the ground connection fabrication process for ESD shunt resistors in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are fabricated with ESD shunt resistor ground connections created by the same or similar process used to fabricate the ESD shunt resistor ground connections in magnetic heads on the wafer. The resistance of the test component ground connections may then be measured in order to determine the quality of the ground connections formed by the fabrication process. The quality of the ground connection fabrication process may then be determined based on the measured resistance of the test components.

Abstract: A method, computer-readable medium, and apparatus for measuring properties of a magnetic read head are provided. In one embodiment, the method includes providing a first and a second magnetic read head. A first dimension of the first magnetic read head is different from a corresponding first dimension of the second magnetic read head. The method further includes determining a first change in conductance of the first magnetic read head resulting from an applied magnetic field and a second change in conductance of the second magnetic read head resulting from the applied magnetic field. The first change in conductance and the second change in conductance are used to determine a change in the first dimension and the corresponding first dimension of the first and second magnetic read heads, respectively. The change in the first dimension and the corresponding first dimension results from a manufacturing process of the first and second magnetic read heads.

Abstract: Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

Abstract: Test methods and components are disclosed for testing the quality of the ground connection fabrication process for ESD shunt resistors in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are fabricated with ESD shunt resistor ground connections created by the same or similar process used to fabricate the ESD shunt resistor ground connections in magnetic heads on the wafer. The resistance of the test component ground connections may then be measured in order to determine the quality of the ground connections formed by the fabrication process. The quality of the ground connection fabrication process may then be determined based on the measured resistance of the test components.

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract: A wafer comprises a kerf region and a test chip. The kerf is a region in a wafer designated to be destroyed by chip dicing. The test chip is located within the kerf region and is configured to provide parametric data for a wafer fabrication process of a head. The test chip comprises a shield portion of a first shield layer electrically coupled to an element, a first pad within a second shield layer electrically coupled to the element, and a second pad within the second shield layer electrically coupled to the shield portion.

Abstract: A test-device system and method for deconvoluting measurements of effects of a sensor-width definition process from measurements of effects of a sensor-stripe-height-definition process in a manufacture of a magnetic sensor. The test-device system comprises a first test device for generating data to characterize a sensor-width-definition process. The test-device system also comprises a second test device for generating data to characterize a sensor-stripe-height-definition process. The test-device system allows independent characterization of a sensor-width parameter and a sensor-stripe-height parameter.

Abstract: A method, computer-readable medium, and apparatus for measuring properties of a magnetic read head are provided. In one embodiment, the method includes providing a first and a second magnetic read head. A first dimension of the first magnetic read head is different from a corresponding first dimension of the second magnetic read head. The method further includes determining a first change in conductance of the first magnetic read head resulting from an applied magnetic field and a second change in conductance of the second magnetic read head resulting from the applied magnetic field. The first change in conductance and the second change in conductance are used to determine a change in the first dimension and the corresponding first dimension of the first and second magnetic read heads, respectively. The change in the first dimension and the corresponding first dimension results from a manufacturing process of the first and second magnetic read heads.

Abstract: Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.

Abstract: A method of initializing a magnetic sensor and storage system implementing such a magnetic sensor. The method includes heating and cooling dual antiferromagnetic layers in the presence of a magnetic field.

Abstract: A method of initializing a magnetic sensor and storage system implementing such a magnetic sensor. The method includes heating and cooling dual antiferromagnetic layers in the presence of a magnetic field.

Abstract: Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.

Abstract: A GMR magnetic sensor is described. The sensor uses one antiferromagnetic layer for stabilizing the pinned layer and another antiferromagnetic layer for providing magnetic bias stabilization of the free layer. Both antiferromagnetic layers are made of the same material and are initialized in the same process step.