Abstract: An amplifying device includes a base plate and an integrated circuit (IC) package mounted on the base plate. The IC package includes a radio frequency (RF) output terminal and a power switching metal-oxide-semiconductor field-effect transistor (MOSFET) die mounted on the RF output terminal. The amplifying device also includes impedance matching circuitry coupled to the power switching MOSFET and the RF output terminal and an insulator substrate mounted on the base plate having thermal conductivity to provide electrical isolation and thermal transfer from the RF output terminal.