Patents by Inventor Robert S. McFadden

Robert S. McFadden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor structure with partially isolated source/drain junctions and methods of making same
    Publication number: 20030136985
    Abstract: A microelectronic structure includes at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type. In a further aspect of the invention, a process for forming a microelectronic structure, such as a MOSFET, having at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type includes forming a recess having a surface, forming a dielectric material over a portion of the surface of the recess, and back-filling the recess to from a source/drain terminal.
    Type: Application
    Filed: January 16, 2003
    Publication date: July 24, 2003
    Inventors: Anand S. Murthy, Robert S. Chau, Patrick Morrow, Robert S. McFadden
  • Methods of making field effect transistor structure with partially isolated source/drain junctions
    Patent number: 6541343
    Abstract: A microelectronic structure includes at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type. In a further aspect of the invention, a process for forming a microelectronic structure, such as a MOSFET, having at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type includes forming a recess having a surface, forming a dielectric material over a portion of the surface of the recess, and back-filling the recess to form a source/drain terminal.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: April 1, 2003
    Assignee: Intel Corporation
    Inventors: Anand S. Murthy, Robert S. Chau, Patrick Morrow, Robert S. McFadden