Patents by Inventor Robert Schreutelkamp

Robert Schreutelkamp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implanted substrate having capping layer and method
    Patent number: 8198180
    Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: June 12, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Jose Ignacio Del Agua Borniquel, Tze Poon, Robert Schreutelkamp, Majeed Foad
  • ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD
    Publication number: 20110092058
    Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.
    Type: Application
    Filed: December 21, 2010
    Publication date: April 21, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jose Ignacio Del AGUA BORNIQUEL, Tze POON, Robert SCHREUTELKAMP, Majeed FOAD
  • Ion implanted substrate having capping layer and method
    Patent number: 7858503
    Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: December 28, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Jose Ignacio Del Agua Borniquel, Tze Poon, Robert Schreutelkamp, Majeed Foad
  • ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD
    Publication number: 20100200954
    Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.
    Type: Application
    Filed: February 6, 2009
    Publication date: August 12, 2010
    Inventors: JOSE IGNACIO DEL AGUA BORNIQUEL, Tze Poon, Robert Schreutelkamp, Majeed Foad