Abstract: A solar cell includes a semiconductor wafer, at least one dielectric layer arranged on the semiconductor wafer, a metal layer arranged on the dielectric layer, and a contact structure arranged in the dielectric layer such that the contact structure provides an electrical connection between the metal layer and the semiconductor wafer. The contact structure has at least one first structure having a minimum dimension and at least one second structure having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer and the minimum dimension of the first structure is greater than the maximum dimension of the second structure.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Abstract: A solar cell includes a semiconductor wafer, at least one dielectric layer arranged on the semiconductor wafer, a metal layer arranged on the dielectric layer, and a contact structure arranged in the dielectric layer such that the contact structure provides an electrical connection between the metal layer and the semiconductor wafer. The contact structure has at least one first structure having a minimum dimension and at least one second structure having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer and the minimum dimension of the first structure is greater than the maximum dimension of the second structure.

Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.

Abstract: A solar cell includes a semiconductor substrate, a rear side passivation layer arranged on a light-remote rear side surface of the substrate, a covering layer arranged on the rear side passivation layer, and a metallization layer arranged on the covering layer. The covering layer has a protective layer section facing the rear side passivation layer and a contact layer section facing the metallization layers.

Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Abstract: A back-side contact solar cell has a semiconductor layer (1) having a semiconductor surface (15) and a semiconductor area (3) adjoining the semiconductor surface (15) in the semiconductor layer (1) An electrode (23) is electrically connected to the semiconductor area (3), wherein the semiconductor area (3) forms a contact area (31) with the electrode (23) along the semiconductor surface (15) A passivation layer (7) is disposed on the semiconductor surface (15) for passivating the semiconductor surface by means of field effect passivation, wherein the passivation layer (7) extends substantially over the entire semiconductor surface (15), and a polarized or neutral buffer layer (9) is disposed between the semiconductor layer (1) and the passivation layer and encompasses the contact area (31).

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.

Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.