Abstract: A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrates and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.

Abstract: A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrate4s and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.