Abstract: A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

Abstract: A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

Abstract: Jet Plunger, a DIY rooter, powered by high water pressure using sweeper nozzle to clear out clogged bathroom sink, toilet bowl, bathtub, shower stall, kitchen sink, and outdoor drains. Sweeper nozzle (FIG. 2) Let V1=velocity at conical section area A1 and diameter D1, V2+velocity at conical section area A2 and diameter D2. According to fluid mechanics A1×V1=A2×V2, (D1/2)×V2 V2=(D1/D2)×V1 The sweeper nozzle 1 choice D1= 10/16?, D2= 3/16? V2=(10/3)×V1 V2=11.11×V1, Therefore the water velocity at its outlet is much greater then at its inlet. A cut of 15/16? garden hose is slid into the sweeper nozzle and glued with the rubber cup. This tube is not required if a sweeper nozzle is mould with a rubber cup.

Abstract: A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

Abstract: A method for dynamically determining bit configuration for a host bridge. The method first obtains information of peripheral components coupled to the host bridge. Next, the method dynamically determines a bit configuration of a processor system bus connecting to the host bridge according to the obtained information.

Abstract: A photonic device package with a passively aligned lens cap is disclosed. The lens cap is positioned with an unobstructed view of the lens portion of the lens cap. A header holding a photonic device, is moved relative to the cap or vice versa until the video display system indicates that the photonic device is aligned to the lens. The cap is held in alignment by forming at least one weld point between the cap and the header. A subsequent hermetic sealing process can be used to permanently seal the cap to the header.

Abstract: A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.

Abstract: An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.

Abstract: A photonic device package with a passively aligned lens cap is disclosed. The lens cap is positioned with an unobstructed view of the lens portion of the lens cap. A header holding a photonic device, is moved relative to the cap or vice versa until the video display system indicates that the photonic device is aligned to the lens. The cap is held in alignment by forming at least one weld point between the cap and the header. A subsequent hermetic sealing process can be used to permanently seal the cap to the header.

Abstract: A method for dynamically adjusting the data transfer order of the Peripheral Component Interconnect Express (PCI Express) root ports is proposed. The method includes: reading the values of the available storage spaces of the first storage units of the PCI Express root ports and the second storage units of the endpoint devices recorded according to the flow control norm of the PCI Express standard; comparing the values of the available storage spaces of the first and second storage units to find the PCI Express root ports with larger data transfer volume; and updating a port arbitration table to adjust the data transfer order of the PCI Express root ports to make the PCI Express root ports with larger data transfer volume have higher priority for data transfer. Thereby, the flexibility and efficiency of the data transfer of the PCI Express root ports can be improved.

Abstract: A rebooting card and its method for determining a timing of restarting a reset mechanism are proposed. The rebooting card is plugged into a socket of a motherboard of a computer system and includes a detection unit, a counter and a reset unit. It functions together with the basic input/output system (BIOS) of the motherboard. When the computer system activates the BIOS and finishes the booting procedure, it sends a finish code to the rebooting card for notification. When the detection unit detects and receives the finish code, it drives the counter to count to a present value so as to drive the reset unit to restart the reset mechanism of the motherboard for testing. Thus, in case that the computer system doesn't finish its booting procedure, the detection unit of the rebooting card will not receive the finish code so that the rebooting card won't restart the reset mechanism.

Abstract: A method for switching processor performance states, implemented in a computer having a processor and a read-only memory (ROM). The processor includes a frequency field and a voltage field respectively for controlling working frequency and voltage thereof. First, the processor retrieves a frequency identification and a voltage identification from the ROM, bits of which respectively correspond one-to-one to bits of the frequency field and the voltage field, and bit numbers of which are respectively the same as the frequency field and the voltage field. Each bit of the frequency field and the voltage field is respectively filled with a new value corresponding one-to-one to the bit corresponding thereto of the frequency identification or the voltage identification.

Abstract: A method for dynamically determining bit configuration for a host bridge. The method first obtains information of peripheral components coupled to the host bridge. Next, the method dynamically determines a bit configuration of a processor system bus connecting to the host bridge according to the obtained information.

Abstract: A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.

Abstract: An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.

Abstract: System and methods for life testing laser diodes is disclosed. The system includes a burn-in rack having a plurality of optoelectronic devices mounted within respective holders and electrical signal connectors that electrically couple the optoelectronic devices to a first electrical connector. A test apparatus holds the burn-in rack and has optical detectors arranged to receive electromagnetic radiation from the mounted optoelectronic devices and couple the output signals from the optical detectors to a second electrical connector. A computer electrically communicates with the connectors and generates a drive current deliverable to each optoelectronic device and receives data from the optical detectors that is based upon the output from each optoelectronic device. The measured optical power output from each optoelectronic device is stored at the computer and following analysis the optoelectronic devices are either removed from the rack or subjected to additional burn-in processes.

Abstract: A device and method is disclosed for passively checking the concentricity measurement of optical components in an optical assembly. The optical assembly includes a package for a photonic device which has a header and a lens cap having an integrated lens. The photonic device is mounted to the header. A display system can be used to view the photonic device through the lens of the cap. Using a camera with a high magnification lens integrated into the display system, the alignment between the photonic device and the lens in the cap is measured.

Abstract: The present invention provides pharmaceutically active compounds useful for the treatment of diseases or disorders of the central nervous system.

Abstract: A Gallium Nitride based Light Emitting Diode (LED) includes both a transparent substrate and a window for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window or at the face of the transparent substrate. An external optical reflector is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window is being utilized, a Distributed Bragg Reflector (DBR) is formed directly on the “backside” of the substrate. However, if light through the substrate is being utilized, a Distributed Bragg Reflector is formed directly on the light emitting portion of the window.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.