Abstract: A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Abstract: A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Abstract: A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Abstract: The present application is directed to methods of forming a photomask pattern for writing a photomask. In one embodiment, a method of the present application comprises providing a first pattern for forming an integrated circuit feature, adjusting the first pattern to form a second pattern that accounts for transition region effects in the first pattern, and correcting the second pattern for proximity effects to form the photomask pattern. Systems for forming photomasks according to methods of the present application are also disclosed.

Abstract: In accordance with an embodiment the invention, there is a device manufacturing method. The method can comprise providing a substrate comprising a radiation-sensitive material disposed thereon and directing a beam of radiation through an aperture such that the radiation produces at least two illumination poles. The method can also comprise exposing the substrate to the at least two illumination poles using off-axis illumination and varying a size of a first illumination pole of the at least two illumination poles with respect to a second illumination pole of the at least two illumination poles.

Abstract: A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Abstract: According to one embodiment, a method for patterning a set of features for a semiconductor device includes providing a mask including a substrate and at least one pair of first and second main features disposed on a substrate. The method also includes positioning the mask over a layer of light-sensitive material, and exposing the mask to a light source. The mask also includes at least one sub-resolution feature connecting the first and second main features.

Abstract: Correcting a mask pattern includes partitioning the mask pattern to yield templates. The following is repeated for each template to generate correction data: a clip mask is generated for a template selected as a main template; the main template is merged with context templates to yield a merged template; the merged template is divided to yield segments including clip segments, where an intersection of the clip mask and the merged template defines an endpoint of a clip segment; a proximity correction procedure is performed on the segments to yield a corrected template; and correction data of the corrected template is selected according to the clip mask. The correction data for the templates are aggregated to correct the mask pattern.

Abstract: Correcting a mask pattern includes partitioning the mask pattern to yield templates. The following is repeated for each template to generate correction data: a clip mask is generated for a template selected as a main template; the main template is merged with context templates to yield a merged template; the merged template is divided to yield segments including clip segments, where an intersection of the clip mask and the merged template defines an endpoint of a clip segment; a proximity correction procedure is performed on the segments to yield a corrected template; and correction data of the corrected template is selected according to the clip mask. The correction data for the templates are aggregated to correct the mask pattern.

Abstract: A system for fabricating a mixed voltage integrated circuit is disclosed in which a gate is provided that contains a gate oxide and a gate conductor on a substrate. A first mask is deposited to pattern the length of the gate by etching, and a second mask pattern is deposited and used to etch the width of the gate, with or without a hard mask.

Abstract: Correcting a mask pattern includes accessing a record associated with an uncorrected pattern that comprises segments. The record associates each segment with a correction grid of a number of correction grids, where each correction grid comprises points. A segment is selected, and an optimal correction for the segment is determined. A correction grid associated with the segment is determined. The segment is snapped to a subset of points of the associated correction grid, where the subset of points is proximate to the optimal correction, to form a corrected pattern of a mask pattern.

Abstract: A method and system for mask pattern correction are disclosed. A portion of a mask pattern is segmented into segments (22) that include a base segment (22a) and a relational segment (22b). The relational segment (22b) is matched with the base segment (22a). A proximity correction is determined for the base segment (22a), and a critical dimension correction is determined for the relational segment (22b). The critical dimension correction is determined with respect to the proximity correction of the matching base segment (22a).

Abstract: Correcting a mask pattern includes accessing a record associated with an uncorrected pattern that comprises segments. The record associates each segment with a correction grid of a number of correction grids, where each correction grid comprises points. A segment is selected, and an optimal correction for the segment is determined. A correction grid associated with the segment is determined. The segment is snapped to a subset of points of the associated correction grid, where the subset of points is proximate to the optimal correction, to form a corrected pattern of a mask pattern.

Abstract: A system for fabricating a mixed voltage integrated circuit is disclosed in which a gate is provided that contains a gate oxide and a gate conductor on a substrate. A first mask is deposited to pattern the length of the gate by etching, and a second mask pattern is deposited and used to etch the width of the gate, with or without a hard mask.

Abstract: A method and system for mask pattern correction are disclosed. A portion of a mask pattern is segmented into segments (22) that include a base segment (22a) and a relational segment (22b). The relational segment (22b) is matched with the base segment (22a). A proximity correction is determined for the base segment (22a), and a critical dimension correction is determined for the relational segment (22b). The critical dimension correction is determined with respect to the proximity correction of the matching base segment (22a).