Abstract: A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted.

Abstract: An apparatus and a system for extracting gaseous specimens to be measured, preferably during the production of polycrystalline silicon, are disclosed. The apparatus according to the invention is a flange-like device (80), which is placed between each of the at least two pipe sections (11a, 11b, 21a, 21b, 41a, 41b) of the outlet pipes (11, 21, 41).

Abstract: A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted.

Abstract: A reactor (10) for the production of polycrystalline silicon is disclosed, comprising a reactor floor (12) exhibiting a plurality of nozzles (40), through which a gas containing silicon flows into the reactor (10). On an outer surface (33) of the reactor floor (12) a cavity (71) is circumscribed by this outer surface (33) and a wall (70), the cavity (71) providing for the distribution of the gas containing silicon to at least part of the nozzles (40).

Abstract: A system and a method for the production of polycrystalline silicon according to the monosilane process are disclosed. At least one reactor (10), at least one converter (20), at least one injection tank (30) and at least one vaporizer (40) are provided. Each reactor (10) is provided with an inlet pipe (11a) for fresh mixtures of gases and an outlet pipe (11b) for partially used-up mixtures of gases. Likewise, each converter (20) comprises an outlet pipe (21) for a mixture of gases and each vaporizer (40) comprises an outlet pipe (41) for a mixture of gases. Several sampling elements (7) for specimens to be measured are provided in the inlet pipe (11a) and the outlet pipe (11b) of each reactor (10) as well as in the outlet pipe (21) of each converter (20) and the outlet pipe (41) of each vaporizer (40). The withdrawn specimens to be measured are fed by the sampling elements (7) via a pipe (8) to at least one gas-phase chromatograph (2).

Abstract: An apparatus and a system for extracting gaseous specimens to be measured, preferably during the production of polycrystalline silicon, are disclosed. The apparatus according to the invention is a flange-like device (80), which is placed between each of the at least two pipe sections (11a, 11b, 21a, 21b, 41a, 41b) of the outlet pipes (11, 21, 41).