Abstract: In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.

Abstract: In a tunnel magnetoresistive (TMR) device, free stack sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. On top of the upper free stack sublayer a thin upper antiferromagnetic layer may be formed to act as a hard bias layer and suppress side reading. The thickness of the upper AF layer is established to tune sensor sensitivity to external fields as well as to promote greater sensor sensitivity.

Abstract: In a tunnel magnetoresistive (TMR) device, free sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. Thus, a CPP MR device may have a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack can be on the tunnel barrier, and the free stack can include structure for promoting uniform circumferential magnetization in the free stack.

Abstract: A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

Abstract: A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.

Abstract: A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.

Abstract: A dual spin valve sensor is provided which is file resettable. An antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures. The AP coupled free layer structure includes an AP coupling layer between first and second AP coupled free layers. When a current pulse is conducted through a sense current circuit the temperature of the sensor increases and conductive layers of the spin valve sensor exert current fields on the first and second pinned structures which set the magnetic spins of first and second antiferromagnetic pinning layers exchange coupled thereto. When the current pulse is terminated or reduced and the sensor cools the first and second pinning layers pin the magnetic moments of the first and second pinned layers antiparallel with respect to each other.

Abstract: A dual spin valve sensor is provided which is file resettable. An antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures. The AP coupled free layer structure includes an AP coupling layer between first and second AP coupled free layers. When a current pulse is conducted through a sense current circuit the temperature of the sensor increases and conductive layers of the spin valve sensor exert current fields on the first and second pinned structures which set the magnetic spins of first and second antiferromagnetic pinning layers exchange coupled thereto. When the current pulse is terminated or reduced and the sensor cools the first and second pinning layers pin the magnetic moments of the first and second pinned layers antiparallel with respect to each other.