Abstract: The subject of this disclosure is applying improved techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Abstract: The present invention relates generally to video or other media transmission, and more particularly, to encoding and decoding of video media that has been transmitted between a video source and a video sink using spread spectrum direct sequence (SSDS) modulation.

Abstract: The subject of this disclosure is applying improved techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Abstract: The present invention relates generally to video or other media transmission, and more particularly, to encoding and decoding of video media that has been transmitted between a video source and a video sink using spread spectrum direct sequence (SSDS) modulation.

Abstract: Digital or analog samples are sent from a video source to a video storage subsystem that encodes the samples into analog levels, stores the analog levels for a period of time, decodes the analog levels back into digital samples and then sends the digital samples to a video sink for display, N samples are encoded into L analog levels for storage. The storage subsystem may be located at the video source, at the video sink, or anywhere in between the two. The storage subsystem may be located on an electromagnetic pathway over which the L encoded analog levels are transmitted from a video source as an analog signal. The L encoded analog levels are written to storage and then later read from storage and retransmitted over the electromagnetic pathway toward a video sink. The storage subsystem may also be integrated with a transmitter that encodes the samples into analog levels for storage or may be integrated with a receiver that stores the analog levels and then decodes the analog levels back into samples.

Abstract: The subject of this disclosure is applying improved techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Abstract: The subject of this disclosure is applying SSDS-CDMA techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Abstract: The present invention relates generally to video or other media transmission, and more particularly, to encoding and decoding of video media that has been transmitted between a video source and a video sink using spread spectrum direct sequence (SSDS) modulation.

Abstract: A method of interconnecting metallic structures in the manufacture of a three-dimensional semiconductor is provided, the method comprising providing a first upper surface of a first substrate and a second upper surface of a second substrate with a bonding layer; bonding the first upper surface to the second upper surface to provide a bond; etching a via through a lower surface of the first substrate, through the first substrate, around a first metallic structure embedded in the first substrate, through the bond and to a second metallic structure embedded in the second substrate; and filling the via with a conductive material to provide a via structure, thereby electrically connecting the metallic structures.

Abstract: The subject of this disclosure is applying SSDS-CDMA techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Abstract: Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, which is turned over and is then bonded to a handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, which is turned over and is then bonded to a handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.