Abstract: A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.

Abstract: A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Abstract: The invention relates to a chemical sensor (1) comprising a substrate layer (2) having a front surface (2.1) and a back surface (2.2) and a sensing layer (3) arranged on the front surface (2.1) of the substrate layer (2), the sensing layer (3) comprising a sensing element (4) and the substrate layer (2) being provided with a well (5) in the back surface (2.2) to a form a membrane (6) that incorporates the sensing element (4), wherein the substrate layer (2) is provided with contact pads (10) on the back surface (2.2) and with vias (11) extending from the front surface (2.1) to the back surface (2.2) for electrically connecting the sensing element (4) with the contact pads (10), wherein a handling layer (17) is provided on top of the sensing layer (3), the handling layer (17) surrounding the sensing element (4), and wherein the thickness (d1) of the handling layer (17) is larger than the thickness (d2) of the substrate layer (2).

Abstract: A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.

Abstract: A pressure sensor is manufactured by joining two wafers, the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.

Abstract: The resonator-based magnetic field sensor system has an oscillatory member as resonator, means for driving an electrical current through said resonator such that its resonance frequency is altered by an external magnetic field to be measured (measurand), and means for detecting or measuring said altered resonance frequency. A secondary excitation of the resonator is effected to determine the said altered resonance frequency from which the measurand can be deduced. In the preferred embodiment, the secondary excitation is included in a closed loop, thus creating an oscillator vibrating at the altered resonance frequency. Though it is known to use the oscillation amplitude of a suitable resonator for this purpose, the novel sensor system identifies and/or measures the frequency (not the amplitude) of the oscillation, which is a function of the magnetic field to be measured.

Abstract: A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Abstract: The resonator-based magnetic field sensor system has an oscillatory member as resonator, means for driving an electrical current through said resonator such that its resonance frequency is altered by an external magnetic field to be measured (measurand), and means for detecting or measuring said altered resonance frequency. A secondary excitation of the resonator is effected to determine the said altered resonance frequency from which the measurand can be deduced. In the preferred embodiment, the secondary excitation is included in a closed loop, thus creating an oscillator vibrating at the altered resonance frequency. Though it is known to use the oscillation amplitude of a suitable resonator for this purpose, the novel sensor system identifies and/or measures the frequency (not the amplitude) of the oscillation, which is a function of the magnetic field to be measured.

Abstract: A pressure sensor is manufactured by joining two wafers, the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.

Abstract: A pressure sensor is manufactured by joining two wafers (1a, 14), the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.