Abstract: One example includes a tunable current element. The element includes a first magnetic flux component that is configured to exhibit a bias flux in response to a first control current. The bias flux can decrease relative energy barriers between discrete energy states of the tunable current element. The element also includes a second magnetic flux component that is configured to exhibit a control flux in response to a second control current. The control flux can change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states, such that the magnetic flux component is configured to generate a hysteretic current that provides a magnetic flux at an amplitude corresponding to the energy state of the tunable current element.

Abstract: One example includes a tunable current element. The element includes a first magnetic flux component that is configured to exhibit a bias flux in response to a first control current. The bias flux can decrease relative energy barriers between discrete energy states of the tunable current element. The element also includes a second magnetic flux component that is configured to exhibit a control flux in response to a second control current. The control flux can change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states, such that the magnetic flux component is configured to generate a hysteretic current that provides a magnetic flux at an amplitude corresponding to the energy state of the tunable current element.

Abstract: One example includes a magnetic flux source system that includes a tunable current element. The tunable current element includes a SQUID inductively coupled to a first control line that conducts a first control current that induces a bias flux in the SQUID to decrease relative energy barriers between discrete energy states of the tunable current element. The system also includes an inductor in a series loop with the SQUID and inductively coupled to a second control line that conducts a second control current that induces a control flux in the series loop to change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states to generate a current that provides a magnetic flux at an amplitude corresponding to the energy state of the at least one tunable current element.

Abstract: One example includes a magnetic flux source system that includes a tunable current element. The tunable current element includes a SQUID inductively coupled to a first control line that conducts a first control current that induces a bias flux in the SQUID to decrease relative energy barriers between discrete energy states of the tunable current element. The system also includes an inductor in a series loop with the SQUID and inductively coupled to a second control line that conducts a second control current that induces a control flux in the series loop to change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states to generate a current that provides a magnetic flux at an amplitude corresponding to the energy state of the at least one tunable current element.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.