Abstract: A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.

Abstract: A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.

Abstract: A process module having remote plasma and in situ plasma generators, and a radiant heater, which represent three separate energy sources. The three sources can be used singly or in any combination and can be separately controllable.

Abstract: A processing apparatus and method for rapid thermal processing wherein the radiant heat source is dynamically reconfigurable to change the heating distribution across the radii of the wafer. Since the radiative and conductive heat flow paths from parts of the wafer near the center are different from the heat flow paths for the parts of the wafer near the edge, the loadings will change dynamically as the wafer is heated and cooled. This temperature dependence in the relative couplings across the wafer makes it very difficult to maintain a flat temperature profile during heatup and cooldown, and failure to maintain a flat temperature profile can cause wafer damage (especially wafer warpage). The present application describes a processing apparatus and method which changes the distribution dynamically, so that a higher fraction of the total power is provided to the wafer edge regions after the wafer is at high temperature.

Abstract: A processing apparatus and method for transferring wafers or flat workpieces between a controlled vacuum load lock and a non-vacuum transfer mechanism. The apparatus is adapted to receive the wafers in a carrier under vacuum. The load lock chamber of the apparatus is then pumped down and purged, if desired. Next the chamber is brought to ambient pressure and an opening to the chamber is created. A transfer arm within the chamber transfers the wafers from the carrier through the opening and to a platform or an non-vacuum carrier. The wafers are received by the arm outside the chamber and transferred through the opening and placed into the vacuum carrier within the chamber. The opening into the chamber is closed and a vacuum is generated. The chamber can then be purged, if desired and the vacuum carrier sealed. The carrier can now be removed from the load lock chamber.