Patents by Inventor Robert T. Schulein

Robert T. Schulein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9232211
    Abstract: A system for three-dimensional visualization of object in a scattering medium includes a sensor for receiving light from the object in the scattering medium and a computing device coupled to the sensor and receiving a plurality of elemental images of the object from the sensor. The computing device causes the elemental images to be magnified through a virtual pin-hole array to create an overlapping pattern of magnified elemental images. The computing device also averages overlapping portions of the element images to form an integrated image.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: January 5, 2016
    Assignee: THE UNIVERSITY OF CONNECTICUT
    Inventors: Bahram Javidi, Inkyu Moon, Robert T. Schulein, Myungjin Cho, Cuong Manh Do
  • Publication number: 20120194649
    Abstract: A system for three-dimensional visualization of object in a scattering medium includes a sensor for receiving light from the object in the scattering medium and a computing device coupled to the sensor and receiving a plurality of elemental images of the object from the sensor. The computing device causes the elemental images to be magnified through a virtual pin-hole array to create an overlapping pattern of magnified elemental images. The computing device also averages overlapping portions of the element images to form an integrated image.
    Type: Application
    Filed: July 30, 2010
    Publication date: August 2, 2012
    Applicant: UNIVERSITY OF CONNECTICUT
    Inventors: Bahram Javidi, Inkyu Moon, Robert T. Schulein, Myungjin Cho, Cuong Manh Do
  • Patent number: 7880204
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: February 1, 2011
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz
  • Publication number: 20100025787
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Application
    Filed: October 2, 2006
    Publication date: February 4, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz