Patents by Inventor Robert Teagle

Robert Teagle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
    Patent number: 9184263
    Abstract: One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: November 10, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Xiuyu Cai, Ajey Poovannummoottil Jacob, Daniel T. Pham, Mark V. Raymond, Christopher M. Prindle, Catherine B. Labelle, Linus Jang, Robert Teagle
  • METHODS OF FORMING GATE STRUCTURES FOR SEMICONDUCTOR DEVICES USING A REPLACEMENT GATE TECHNIQUE AND THE RESULTING DEVICES
    Publication number: 20150187905
    Abstract: One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 2, 2015
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Xiuyu Cai, Ajey Poovannummoottil Jacob, Daniel T. Pham, Mark V. Raymond, Christopher M. Prindle, Catherine B. Labelle, Linus Jang, Robert Teagle