Abstract: An electrical resistance is produced in a semiconductor device by first providing a semiconductor resistor structure that includes a semiconductor resistor having formed thereon a native oxide layer. A portion of the native oxide layer that overlies a corresponding top surface portion of the semiconductor resistor is removed, in order to expose the top surface portion of the semiconductor resistor. Metal is deposited on the exposed top surface portion of the semiconductor resistor. A chemical reaction is effectuated in order to reduce the likelihood of metal reacting with the underlying silicon on any portion of the semiconductor resistor other than the top surface portion thereof. The chemical reaction can be an oxidation reaction that produces on the semiconductor resistor structure an oxide layer other than the native oxide layer and substantially thicker than the native oxide layer.

Abstract: A method is provided for designing a communications network. A variation of parameters is introduced into a set of parameters located in at least one of a plurality of databases related to the communications network. A set of business rules is applied to the varied set of parameters in order to produce a business projection. An evaluation is made of the business projection that results from applying the business rules to the variation. Evaluating the business projection includes comparing the business projection to an actual business outcome. Further changes may be made to the varied set of parameters based on the comparison of the business projection to the actual business outcome. A communication network may be designed in line with the business projection. Statistics are calculated that relate to a business objective.