Abstract: A controller of a quantum system causes a dressing field circuit to generate a dressing field at a target location where one or more target qubits are located. The dressing field modifies a set of initial states into a set of superposition states. A first (second) dressed state of the set of superposition states includes a non-zero contribution from a first (second) qubit state of the set of initial states. A dressed frequency difference between the first and second dressed states and a qubit frequency difference between the first and second qubit states are different. The dressing field is configured to generate first and second dressed states having a desired level of sensitivity (e.g., energy/frequency dependence) on the component of the external magnetic field that is in the quantization direction of the quantum system.

Abstract: An electrical header for use in an electrical connector assembly includes a body adapted to mount to an object and having an opening formed therethrough for receiving an electrical terminal. The body further defines a plug on a first side thereof and adapted to engage with a mating electrical connector of the assembly. The plug includes a pair of first opposing sidewalls extending from the body and defining a locking feature adapted to engage with a corresponding locking feature of the mating connector, and a pair of second opposing sidewalls extending from the body and defining a keying feature. The first and second pairs of opposing sidewalls are adapted to mate with a first mating connector oriented in a first direction, and mate with a second mating connector oriented in a second direction distinct from the first direction.

Abstract: A patient interface, such as a nasal cannula is described. The patient interface has a body portion to be located, in-use upon a face of a user. The body portion has at least one side arm that extends laterally from a central bridge portion to be located about a user's septum region, where each side arm is connected to a resilient, or relatively more rigid, bridge portion element. The interface has at least one, and preferably a pair of, nasal prong(s). The body portion has at least one fluid passageway connected to the nasal prong(s) for supply of a gas to the nare(s) of the user's nose. A cross section of the passageway varies along the length of the body portion to regions of varying flexibility along the body portion. The bridge portion element defines a substantially predetermined spatial relationship for outlet(s) of a gas delivery system supplying gas via each side arm to the outlet(s) from which, for example, the nasal prong(s) may be provided in fluid connection.

Abstract: A method for laser cooling an object crystal comprising at least two atomic objects and confined by a confinement apparatus is provided. A controller controls one or more manipulation sources to cause a first instance of manipulation signals to be incident on the object crystal at a target location defined at least in part by the confinement apparatus. The manipulation signals are configured to laser cool a first motional mode of the object crystal. The controller causes an adiabatic transfer of phonons from a second motional mode of the object crystal to the first motional mode of the object crystal. The controller controls the one or more manipulation sources to cause a second instance of the manipulation signals to be incident on the object crystal at the target location. The manipulation signals are configured to laser cool the first motional mode of the object crystal.

Abstract: An atomic object confinement apparatus comprising a plurality of electrodes and one or more quasi-direct-current (quasi-DC) circuits. The plurality of electrodes comprise a plurality of radio frequency (RF) rail electrodes arranged to define, at least in part, a periodic array of confinement segments. The plurality of RF rail electrodes are configured such that, when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate a pseudopotential in a form of an array of trapping regions configured to contain at least one atomic object within a respective trapping region of the array of trapping regions. The one or more quasi-direct-current (quasi-DC) circuits are arranged to generate a magnetic field having a selectable magnitude and a selectable direction, such that the generated magnetic field acts on at least one atomic object within the array of trapping regions.

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: A system and method for drilling are provided. The method may comprise receiving well plan and BHA information; determining the BHA is approaching a first zone in which a first slide drilling operation is to occur; and receiving first zone characteristics. The method may further comprise determining an on bottom time to orient the BHA in the first zone; determining an additional time for the first slide drilling operation; and determining an off bottom time to orient the BHA prior to reaching the first zone. The method may further comprise comparing the additional time for the first slide drilling operation in the first zone to the off bottom time to orient the BHA prior to reaching the first zone, and sending one or more control signals to orient the BHA either prior to reaching or at the first zone based at least in part on the comparison.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

Abstract: A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.

Abstract: An automated slide drilling system (ASDS) may be used with a drilling rig system to control slide drilling. The ASDS may autonomously control slide drilling without user input during the slide drilling. The ASDS may further support a transition from rotary drilling to slide drilling to rotary drilling without user input during the transitions. The ASDS may also support user input and user notifications for various steps to enable manual or semi-manual control of slide drilling by a driller or an operator.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Nondestructive characterization of crystalline wafers is provided, including defect detection, identification, and counting. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods based on deep neural networks. Certain aspects relate to nondestructive methods for defect characterization of silicon carbide (SiC) wafers. By subjecting SiC wafers to nondestructive defect characterization, SiC wafers in their final state may be characterized and subsequently used for device fabrication, vastly reducing the expense of the characterization process. Nondestructive defect characterization also allows for increased sampling and improved feedback loops between crystalline growth process development and subsequent device production.

Abstract: Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

Abstract: Examples of the present disclosure describe systems and methods for the non-disruptive servicing of components of a user mode process. In examples, a user mode process comprises multiple components, each encapsulating a distinct piece of functionality. A replacement component is loaded and initialized. The replacement component is validated to ensure that the required dependencies of the replacement component are satisfied by the other components of the user mode process. The component to be serviced and the components having dependencies on the component to be serviced are suspended to enable a snapshot of the runtime state of the component to be serviced to be captured. The runtime state is copied to the replacement component and the components having dependencies on the component to be serviced are updated to reference the replacement component. The replacement component is executed and the suspended components are resumed. The component to be serviced is unloaded.

Abstract: A controller of a quantum system causes a geometric phase gate to be performed on two or more qubits by causing two or more qubits of the quantum system to experience a (near field and/or non-radiating) magnetic field gradient; and, responsive to determining that a gate time period has elapsed since the two or more qubits of the quantum system started to experience the magnetic field gradient, causing the two or more qubits to no longer experience the magnetic field gradient. The entanglement of the two or more qubits corresponding to the performance of the gate is enacted, mediated, and/or caused by the magnetic field gradient.

Abstract: Systems and methods for determining and reporting actual utilization of a core of a central processing unit (CPU) of a host. Prior to implementation of aspects of the present disclosure, running a poll querying endpoints of a process for work appears to the host's operating system as busy work (e.g., taking full use of the core for the poll duration). However, only a percentage of the duration of the poll is used to process a task of the process, where the remaining duration of the poll is spent querying the endpoints (idle time) and the core is not performing a task. Accordingly, a core utilization reporting system and method automatically detects the processing time of the tasks of a process, determines actual CPU utilization of the core based on a percentage of the time the core is busy polling (doing effectively no work) versus doing actual work (processing a task).

Abstract: A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency ?0, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency ?0 by frequency difference ?. The at least one ion has a Rabi frequency ?? due to the two microwave fields and a Rabi frequency ?g due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity ?g/? is in a range between zero and 5×10?2.

Abstract: An automated slide drilling system (ASDS) may be used with a drilling rig system to control slide drilling. The ASDS may autonomously control slide drilling without user input during the slide drilling. The ASDS may further support a transition from rotary drilling to slide drilling to rotary drilling without user input during the transitions. The ASDS may also support user input and user notifications for various steps to enable manual or semi-manual control of slide drilling by a driller or an operator.