Abstract: Aqueous mineralizer solutions having retrograde solubility for ZnO contain a mineral acid in which ZnO is soluble and at least one compound of a coordinating ligand for Zn2+ ions wherein the coordinating ligand compound is present in an amount that is effective to inhibit Zn(OH)+ ion formation as ZnO is dissolved in the solution. Reduced temperature methods using the mineralizer solutions to grow pure or doped ZnO crystals, pure or doped ZnO thick or thin films, and pure or doped ZnO crystalline powders are also disclosed. Cation doped ZnOs prepared by the inventive methods are also disclosed.

Abstract: Aqueous mineralizer solutions having retrograde solubility for ZnO contain a mineral acid in which ZnO is soluble and at least one compound of a coordinating ligand for Zn2+ ions wherein the coordinating ligand compound is present in an amount that is effective to inhibit Zn(OH)+ ion formation as ZnO is dissolved in the solution. Reduced temperature methods using the mineralizer solutions to grow pure or doped ZnO crystals, pure or doped ZnO thick or thin films, and pure or doped ZnO crystalline powders are also disclosed. Cation doped ZnOs prepared by the inventive methods are also disclosed.

Abstract: Monocrystalline lanthanum orthogallate compositions grown along a predetermined crystallographic direction in the form of a single crystal of a size greater than 1 cm in diameter/width and at least 10 cm in length are described. Such compositions include mixed crystal monocrystalline lanthanum orthogallates wherein a portion of the lanthanum is replaced with a rare earth element of smaller ionic radius than lanthanum and/or a portion of the gallium is replaced with Al, Sc or In. The foregoing monocrystalline compositions are particularly suited as superconductor substrates.

Abstract: A thin film superconducting device is described in which the substrate is a single or mixed single crystal of lanthanum orthogallate grown from a pure melt of lanthanum, gallium and additive oxides. A portion of the gallium single crystal can be replaced by Sc, Al or In and/or a portion of the lanthanum can be replaced by a rare earth element of smaller ionic radius than lanthanum to allow for manipulation of the lattice constant.

Abstract: Doped lanthanum orthogallate laser materials produced in the form of large perovskite-type doped single crystals are disclosed. Doped single crystals of lanthanum orthogallate are grown from a pure melt of lanthanum oxide, gallium oxide and dopant oxide while controlling the major crystallographic direction of solidification. Dopants are selected from the rare earth series elements, first transition series elements and actinide series elements.

Abstract: Monocrystalline lanthanum orthogallate grown along a predetermined crystallographic direction in the form of a single crystal of a size greater than 1 cm in diameter/width and at least 10 cm in length is described. Also described is a class of perovskite type monocrystalline compositions which are readily grown from a pure melt along a predetermined crystallographic direction. Such perovskite-type monocrystalline compositions have the following formulae:LaGa.sub.1-x Sc.sub.x O.sub.3 1.LaGa.sub.1-x Al.sub.x O.sub.3 2.LaGa.sub.1-x In.sub.x O.sub.3 3.wherein x=0.001 to 0.5. Additionally described is a class of perovskite-type monocrystalline compositions of the following formula:R.sub.x La.sub.1-x GaO.sub.3wherein R is a rare earth element of smaller ionic radius than La and wherein x=0.001 to 0.5. Further described is a class of perovskite-type monocrystalline compositions of the following formulae:R.sub.x La.sub.1-x Ga.sub.1-y Al.sub.y O.sub.3R.sub.x La.sub.1-x Ga.sub.1-y Sc.sub.y O.sub.3R.sub.x La.sub.1-x Ga.

Abstract: A method for reducing the radial temperature gradient of a radiant energy emitting heated body is described. The method comprises insulating such heated body with a refractory insulating material containing an efficient absorber of the radiant energy emitted by said heated body. Specifically, materials containing trivalent dysprosium are disclosed as suitable thermal insulation for use where the heated body is at a temperature in the 1800.degree. C.-2500.degree. C. range. Also described is a crystal growth chamber for pulling unicrystalline compositions from a melt utilizing the Czochralski technique. The chamber is characterized by the placement of a refractory insulating material containing an efficient absorber of near infrared radiation around a crucible which contains the melt. Dysprosium is specifically disclosed as an efficient absorber of the near infrared radiation which is emitted by melt and crucible at the elevated temperatures employed for boule formation utilizing the Czochralski technique.