Abstract: A method of forming an article comprises forming a feed material around one or more shapeholders and sintering the feed material and the one or more shapeholders to form a sintered article comprising the one or more shapeholders in a base material. The sintered article is exposed to a solvent to remove the one or more shapeholders from the base material. Additional methods are disclosed, as well as articles including one or more microchannels exhibiting a diameter of from about 5 ?m to about 10 mm.

Abstract: A method of recovering an elemental rare earth metal comprises placing a rare earth-containing material comprising a rare earth metal in a reaction solution comprising a reducing agent and a non-aqueous solvent comprising an ionic liquid or a eutectic mixture, reducing the rare earth metal with the reducing agent to form a metallic rare earth metal and cations of the reducing agent, transferring the cations of the reducing agent from the reaction solution to an electrochemical cell through an ion exchange membrane, and reducing the cations of the reducing agent in the electrochemical cell. Related methods of forming an elemental rare earth metal, and related systems are disclosed.

Abstract: A method of forming an elemental metal (e.g., a rare-earth element) includes forming a multicomponent solution comprising an ionic liquid, a secondary component, and a metal-containing compound. The multicomponent solution is contacted with at least a first electrode and a second electrode. A current is passed between the first electrode to the second electrode through the multicomponent solution. The metal-containing compound is reduced to deposit the elemental metal therefrom on the first electrode.

Abstract: A method of removing of recovering an elemental rare earth metal comprises placing a rare earth-containing material comprising a rare earth metal in a reaction solution comprising a reducing agent and a non-aqueous solvent comprising an ionic liquid or a eutectic mixture, reducing the rare earth metal with the reducing agent to form a metallic rare earth metal and cations of the reducing agent, transferring the cations of the reducing agent from the reaction solution to an electrochemical cell through an ion exchange membrane, and reducing the cations of the reducing agent in the electrochemical cell. Related methods of forming an elemental rare earth metal, and related systems are disclosed.

Abstract: A method of forming an elemental metal (e.g., a rare-earth element) includes forming a multicomponent solution comprising an ionic liquid, a secondary component, and a metal-containing compound. The multicomponent solution is contacted with at least a first electrode and a second electrode. A current is passed between the first electrode to the second electrode through the multicomponent solution. The metal-containing compound is reduced to deposit the elemental metal therefrom on the first electrode.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.