Abstract: Disclosed are integrated circuit (IC) structure embodiments with a three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) in back-end-of-the-line (BEOL) metal levels. The MIMCAP includes a plurality of high aspect ratio trenches that extend through at least one relatively thick dielectric layer within the metal levels. Conformal layers of a metal, an insulator and another metal line the trenches and cover the top of the dielectric layer in the area of the MIMCAP. Different configurations for the bottom and top electrode contacts can be used including, for example, one configuration where the top electrode contact is a dual-damascene structure within an ultra-thick metal (UTM) level above the MIMCAP and another configuration where both the top and bottom electrode contacts are such dual-damascene structures.

Abstract: Disclosed are integrated circuit (IC) structure embodiments with a three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) in back-end-of-the-line (BEOL) metal levels. The MIMCAP includes a plurality of high aspect ratio trenches that extend through at least one relatively thick dielectric layer within the metal levels. Conformal layers of a metal, an insulator and another metal line the trenches and cover the top of the dielectric layer in the area of the MIMCAP. Different configurations for the bottom and top electrode contacts can be used including, for example, one configuration where the top electrode contact is a dual-damascene structure within an ultra-thick metal (UTM) level above the MIMCAP and another configuration where both the top and bottom electrode contacts are such dual-damascene structures.